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Paper Abstract and Keywords
Presentation 2011-08-26 10:25
[Invited Talk] Status and Prospect of Ultra Low Power Logic Devices
Jiro Ida (KIT) SDM2011-86 ICD2011-54 Link to ES Tech. Rep. Archives: SDM2011-86 ICD2011-54
Abstract (in Japanese) (See Japanese page) 
(in English) Ultra Low Power Application of Sensor network, or, implanted medical devices where battery less, ultimately, is needed, will be in reality with expanding research of energy harvestings. Re-consideration of device specification on logic transistor in VLSI for those applications reveals again the need of reduction of the off current and the subthreshold swing of the transistors. For those applications, status of Bulk transistor, FD-SOI transistor and the super steep cut off transistor which S-value is over the theoretical limit and which research papers are increased, are reviewed. Finally, some data of the steep S-value obtained by floating body effect in SOI transistor which is one of I-MOS are introduced.
Keyword (in Japanese) (See Japanese page) 
(in English) Ultra Low Power / Sensor Network / FD-SOI / Tunnel FET / Impact Ionization MOS / / /  
Reference Info. IEICE Tech. Rep., vol. 111, no. 187, SDM2011-86, pp. 79-83, Aug. 2011.
Paper # SDM2011-86 
Date of Issue 2011-08-18 (SDM, ICD) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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Conference Information
Committee SDM ICD  
Conference Date 2011-08-25 - 2011-08-26 
Place (in Japanese) (See Japanese page) 
Place (in English) Toyama kenminkaikan 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Low voltage/low power techniques, novel devices, circuits, and applications 
Paper Information
Registration To SDM 
Conference Code 2011-08-SDM-ICD 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Status and Prospect of Ultra Low Power Logic Devices 
Sub Title (in English)  
Keyword(1) Ultra Low Power  
Keyword(2) Sensor Network  
Keyword(3) FD-SOI  
Keyword(4) Tunnel FET  
Keyword(5) Impact Ionization MOS  
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1st Author's Name Jiro Ida  
1st Author's Affiliation Kanazawa Institute of Technology (KIT)
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Speaker Author-1 
Date Time 2011-08-26 10:25:00 
Presentation Time 45 minutes 
Registration for SDM 
Paper # SDM2011-86, ICD2011-54 
Volume (vol) vol.111 
Number (no) no.187(SDM), no.188(ICD) 
Page pp.79-83 
#Pages
Date of Issue 2011-08-18 (SDM, ICD) 


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