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Paper Abstract and Keywords
Presentation 2011-10-20 15:20
Effect of Si surface roughness on electrical characteristics of HfON gate insulator
Dae-Hee Han, Shun-ichiro Ohmi (Tokyo Inst. of Tech.) SDM2011-100
Abstract (in Japanese) (See Japanese page) 
(in English) In this paper, the effect of Si surface roughness on electrical characteristics of HfON gate insulator formed by the electron cyclotron resonance (ECR) plasma sputtering was investigated. In order to improve the electrical characteristics of HfON gate insulator, interface roughness between HfON and Si substrate should be reduced. The surface roughness of Si substrate was reduced by 1 μm-thick wet oxidation followed by the wet etching (HCl:HF=19:1). The obtained RMS roughness was 0.11 nm (as-cleaned: 0.21 nm). The HfON was formed by 1 nm-thick HfN deposition utilizing ECR plasma sputtering followed by the Ar/O2 plasma oxidation. The 600°C PDA was carried out for 1 min in N2 ambient. It was found that the leakage current was decreased from 2 x 10-3 A/cm2 to 3 x 10-4 A/cm2 at VFB -1 V by reducing the Si surface roughness.
Keyword (in Japanese) (See Japanese page) 
(in English) Surface roughness / HfON gate insulator / ECR plasma sputtering / / / / /  
Reference Info. IEICE Tech. Rep., vol. 111, no. 249, SDM2011-100, pp. 17-20, Oct. 2011.
Paper # SDM2011-100 
Date of Issue 2011-10-13 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee SDM  
Conference Date 2011-10-20 - 2011-10-21 
Place (in Japanese) (See Japanese page) 
Place (in English) Tohoku Univ. (Niche) 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Process science and new process technologies 
Paper Information
Registration To SDM 
Conference Code 2011-10-SDM 
Language English 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Effect of Si surface roughness on electrical characteristics of HfON gate insulator 
Sub Title (in English)  
Keyword(1) Surface roughness  
Keyword(2) HfON gate insulator  
Keyword(3) ECR plasma sputtering  
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1st Author's Name Dae-Hee Han  
1st Author's Affiliation Tokyo Institute of Technology (Tokyo Inst. of Tech.)
2nd Author's Name Shun-ichiro Ohmi  
2nd Author's Affiliation Tokyo Institute of Technology (Tokyo Inst. of Tech.)
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Speaker Author-1 
Date Time 2011-10-20 15:20:00 
Presentation Time 25 minutes 
Registration for SDM 
Paper # SDM2011-100 
Volume (vol) vol.111 
Number (no) no.249 
Page pp.17-20 
#Pages 4 
Date of Issue 2011-10-13 (SDM) 

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