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Paper Abstract and Keywords
Presentation 2011-10-21 10:50
AR-XPS Study on Chemical Bonding State of In0.53Ga0.47As Surface treated by Various Surface Treatments
Yuya Numajiri, Koji Yamashita, Arata Komatsu (Tokyo City Univ.), Darius Zade (FRC. Tokyo Inst. of Tech), Kuniyuki Kakushima (IGSSE. Tokyo Inst. of Tech.), Hiroshi Iwai (FRC. Tokyo Inst. of Tech), Hiroshi Nohira (Tokyo City Univ.) SDM2011-106
Abstract (in Japanese) (See Japanese page) 
(in English) We have investigated the effect of HF, HF + air exposure, (NH4)2S and Hexamethydisilazane treatments on the chemical bonding states at the In0.53Ga0.47As surface by X-ray photoemission spectroscopy. Analyses of As 3d, Ga 3p, In 3d, S 1s, and Si 2p spectra showed that (NH4)2S treatment was effective in suppressing oxide formation on the In0.53Ga0.47As surface and that S atom existed on the In0.53Ga0.47As surface. In contrast, Hexamethydisilazane treatment was not effective in suppressing oxide formation.
Keyword (in Japanese) (See Japanese page) 
(in English) InGaAs / suface Treatment / XPS / (NH4)2S / / / /  
Reference Info. IEICE Tech. Rep., vol. 111, no. 249, SDM2011-106, pp. 53-58, Oct. 2011.
Paper # SDM2011-106 
Date of Issue 2011-10-13 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee SDM  
Conference Date 2011-10-20 - 2011-10-21 
Place (in Japanese) (See Japanese page) 
Place (in English) Tohoku Univ. (Niche) 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Process science and new process technologies 
Paper Information
Registration To SDM 
Conference Code 2011-10-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) AR-XPS Study on Chemical Bonding State of In0.53Ga0.47As Surface treated by Various Surface Treatments 
Sub Title (in English)  
Keyword(1) InGaAs  
Keyword(2) suface Treatment  
Keyword(3) XPS  
Keyword(4) (NH4)2S  
Keyword(5)  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Yuya Numajiri  
1st Author's Affiliation Tokyo City University (Tokyo City Univ.)
2nd Author's Name Koji Yamashita  
2nd Author's Affiliation Tokyo City University (Tokyo City Univ.)
3rd Author's Name Arata Komatsu  
3rd Author's Affiliation Tokyo City University (Tokyo City Univ.)
4th Author's Name Darius Zade  
4th Author's Affiliation Frontier Research Center Tokyo Institute of Technology (FRC. Tokyo Inst. of Tech)
5th Author's Name Kuniyuki Kakushima  
5th Author's Affiliation Interdisciplinary Graduate School of Science and Engineering Tokyo Institute of Technology (IGSSE. Tokyo Inst. of Tech.)
6th Author's Name Hiroshi Iwai  
6th Author's Affiliation Frontier Research Center Tokyo Institute of Technology (FRC. Tokyo Inst. of Tech)
7th Author's Name Hiroshi Nohira  
7th Author's Affiliation Tokyo City University (Tokyo City Univ.)
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Speaker Author-1 
Date Time 2011-10-21 10:50:00 
Presentation Time 25 minutes 
Registration for SDM 
Paper # SDM2011-106 
Volume (vol) vol.111 
Number (no) no.249 
Page pp.53-58 
#Pages 6 
Date of Issue 2011-10-13 (SDM) 

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