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Paper Abstract and Keywords
Presentation 2011-10-21 14:50
Electrical Characterization Techniques for Si Substrate Damage during Plasma Etching
Yoshinori Nakakubo, Koji Eriguchi, Asahiko Matsuda, Yoshinori Takao, Kouichi Ono (Kyoto Univ.) SDM2011-111
Abstract (in Japanese) (See Japanese page) 
(in English) We present analysis techniques for plasma process-induced damage in the Si substrate. The techniques are based on the electrical characterizations (current-voltage and capacitance-voltage measurements) of damaged structure – the surface- / interfacial-damaged layer / Si substrate. Using the techniques, the defect density created in the Si substrate was estimated for various plasma conditions with Ar gas in an inductively coupled plasma reactor. The effect of O2 addition into Ar-plasma was also discussed. In addition, the damage creation mechanism by He-plasma and that by Ar-plasma was compared. The presented electrical characterization techniques were useful for the low-damage plasma process design.
Keyword (in Japanese) (See Japanese page) 
(in English) Plasma induced damage / defect / capacitance-voltage / current-voltage / / / /  
Reference Info. IEICE Tech. Rep., vol. 111, no. 249, SDM2011-111, pp. 79-84, Oct. 2011.
Paper # SDM2011-111 
Date of Issue 2011-10-13 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2011-111

Conference Information
Committee SDM  
Conference Date 2011-10-20 - 2011-10-21 
Place (in Japanese) (See Japanese page) 
Place (in English) Tohoku Univ. (Niche) 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Process science and new process technologies 
Paper Information
Registration To SDM 
Conference Code 2011-10-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Electrical Characterization Techniques for Si Substrate Damage during Plasma Etching 
Sub Title (in English)  
Keyword(1) Plasma induced damage  
Keyword(2) defect  
Keyword(3) capacitance-voltage  
Keyword(4) current-voltage  
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Keyword(6)  
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1st Author's Name Yoshinori Nakakubo  
1st Author's Affiliation Kyoto University (Kyoto Univ.)
2nd Author's Name Koji Eriguchi  
2nd Author's Affiliation Kyoto University (Kyoto Univ.)
3rd Author's Name Asahiko Matsuda  
3rd Author's Affiliation Kyoto University (Kyoto Univ.)
4th Author's Name Yoshinori Takao  
4th Author's Affiliation Kyoto University (Kyoto Univ.)
5th Author's Name Kouichi Ono  
5th Author's Affiliation Kyoto University (Kyoto Univ.)
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Speaker Author-1 
Date Time 2011-10-21 14:50:00 
Presentation Time 25 minutes 
Registration for SDM 
Paper # SDM2011-111 
Volume (vol) vol.111 
Number (no) no.249 
Page pp.79-84 
#Pages 6 
Date of Issue 2011-10-13 (SDM) 

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