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Paper Abstract and Keywords
Presentation 2011-11-11 10:25
Comparisons of Ballistic Device Performances of Si Nanowire and InAs Nanowire FETs based on First-Principles Band Structure Calculation
Naoya Takiguchi, Shunsuke Koba, Hideaki Tsuchiya, Matsuto Ogawa (Kobe Univ.) SDM2011-121
Abstract (in Japanese) (See Japanese page) 
(in English) In this paper, we study the band structures of <110>-oriented Si and InAs nanowires based on a first-principles calculation, and project performance potentials of Si and InAs nanowire field-effect-transistors (NWFETs) by using a semi-classical ballistic transport model. We demonstrate that the device performance of InAs NWFETs strongly depends on its cross sectional dimension and gate oxide thickness. In particular, InAs NWFETs unexpectedly indicate the lower current drivability than Si NWFETs as the gate oxide thickness is extremely scaled down to 0.5 nm, in the ballistic limit. We discuss the mechanism in terms of operation in quantum capacitance limit (QCL). We also demonstrate that the advantage in a lower power operation with InAs NWFETs reduces when the devices operate in the QCL or higher subbands with heavier transport effective mass participate in the transport.
Keyword (in Japanese) (See Japanese page) 
(in English) Nanowire FET / high mobility materials / first-principles calculation / ballistic transport / quantum capacitance / / /  
Reference Info. IEICE Tech. Rep., vol. 111, no. 281, SDM2011-121, pp. 33-38, Nov. 2011.
Paper # SDM2011-121 
Date of Issue 2011-11-03 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee SDM  
Conference Date 2011-11-10 - 2011-11-11 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Process, Device, Circuit Simulations, etc 
Paper Information
Registration To SDM 
Conference Code 2011-11-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Comparisons of Ballistic Device Performances of Si Nanowire and InAs Nanowire FETs based on First-Principles Band Structure Calculation 
Sub Title (in English)  
Keyword(1) Nanowire FET  
Keyword(2) high mobility materials  
Keyword(3) first-principles calculation  
Keyword(4) ballistic transport  
Keyword(5) quantum capacitance  
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1st Author's Name Naoya Takiguchi  
1st Author's Affiliation Kobe University (Kobe Univ.)
2nd Author's Name Shunsuke Koba  
2nd Author's Affiliation Kobe University (Kobe Univ.)
3rd Author's Name Hideaki Tsuchiya  
3rd Author's Affiliation Kobe University (Kobe Univ.)
4th Author's Name Matsuto Ogawa  
4th Author's Affiliation Kobe University (Kobe Univ.)
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Speaker Author-3 
Date Time 2011-11-11 10:25:00 
Presentation Time 25 minutes 
Registration for SDM 
Paper # SDM2011-121 
Volume (vol) vol.111 
Number (no) no.281 
Page pp.33-38 
#Pages 6 
Date of Issue 2011-11-03 (SDM) 

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