Information: Join today and make your research activities more affordable! Technical workshop participation fees and annual registration fees are available at member rates.
Notice: [Important] Announcement of Changes to Registration Fee Payment and Manuscript Upload Procedures for IEICE Technical Meetings
IEICE Technical Committee Submission System
Conference Paper's Information		 Online Proceedings
[Sign in]
Tech. Rep. Archives
 Go Top Page Go Previous   [Japanese] / [English] 

Paper Abstract and Keywords
Presentation 2011-11-17 10:55
Etch-pit method of threading dislocations in epitaxial AlN films
Takuya Nomura, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Yuuki Ryu, Takaaki Kuwahara, Noriyuki Kuwano (Kyusyu Univ.) ED2011-75 CPM2011-124 LQE2011-98
Abstract (in Japanese) (See Japanese page) 
(in English) AlN is an attractive substrate for short-wavelength optoelectronics devices based on AlGaN. We have investigated threading dislocations (TDs) in epitaxial AlN films by etch-pit method. Epitaxial AlN films were etched by mixed acid solution (KOH+NaOH). The etch-pits were classified into 3 kinds of TD groups by those size. The TD density in AlN substrate grown by sublimation method was less than that of an epitaxial AlN on a sapphire、 and did not increase after HVPE growth of the thick AlN on the sublimation-AlN substrate. Moreover, thick AlN films were grown on AlN/sapphire stripe seeds with triangular shape in cross section of the stripe pattern, and the TDs density on the surface of HVPE-grown films was reduced by the effect of facet control techniques.
Keyword (in Japanese) (See Japanese page) 
(in English) AlN / HVPE / etch-pit method / threading dislocations / facer control / / /  
Reference Info. IEICE Tech. Rep., vol. 111, no. 290, ED2011-75, pp. 11-14, Nov. 2011.
Paper # ED2011-75 
Date of Issue 2011-11-10 (ED, CPM, LQE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2011-75 CPM2011-124 LQE2011-98

Conference Information
Committee LQE ED CPM  
Conference Date 2011-11-17 - 2011-11-18 
Place (in Japanese) (See Japanese page) 
Place (in English) Katsura Hall，Kyoto Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ED 
Conference Code 2011-11-LQE-ED-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Etch-pit method of threading dislocations in epitaxial AlN films 
Sub Title (in English)  
Keyword(1) AlN  
Keyword(2) HVPE  
Keyword(3) etch-pit method  
Keyword(4) threading dislocations  
Keyword(5) facer control  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Takuya Nomura  
1st Author's Affiliation Mie University (Mie Univ.)
2nd Author's Name Hideto Miyake  
2nd Author's Affiliation Mie University (Mie Univ.)
3rd Author's Name Kazumasa Hiramatsu  
3rd Author's Affiliation Mie University (Mie Univ.)
4th Author's Name Yuuki Ryu  
4th Author's Affiliation Kyusyu University (Kyusyu Univ.)
5th Author's Name Takaaki Kuwahara  
5th Author's Affiliation Kyusyu University (Kyusyu Univ.)
6th Author's Name Noriyuki Kuwano  
6th Author's Affiliation Kyusyu University (Kyusyu Univ.)
7th Author's Name  
7th Author's Affiliation ()
8th Author's Name  
8th Author's Affiliation ()
9th Author's Name  
9th Author's Affiliation ()
10th Author's Name  
10th Author's Affiliation ()
11th Author's Name  
11th Author's Affiliation ()
12th Author's Name  
12th Author's Affiliation ()
13th Author's Name  
13th Author's Affiliation ()
14th Author's Name  
14th Author's Affiliation ()
15th Author's Name  
15th Author's Affiliation ()
16th Author's Name  
16th Author's Affiliation ()
17th Author's Name  
17th Author's Affiliation ()
18th Author's Name  
18th Author's Affiliation ()
19th Author's Name  
19th Author's Affiliation ()
20th Author's Name  
20th Author's Affiliation ()
21st Author's Name  
21st Author's Affiliation ()
22nd Author's Name  
22nd Author's Affiliation ()
23rd Author's Name  
23rd Author's Affiliation ()
24th Author's Name  
24th Author's Affiliation ()
25th Author's Name  
25th Author's Affiliation ()
26th Author's Name / /
26th Author's Affiliation ()
()
27th Author's Name / /
27th Author's Affiliation ()
()
28th Author's Name / /
28th Author's Affiliation ()
()
29th Author's Name / /
29th Author's Affiliation ()
()
30th Author's Name / /
30th Author's Affiliation ()
()
31st Author's Name / /
31st Author's Affiliation ()
()
32nd Author's Name / /
32nd Author's Affiliation ()
()
33rd Author's Name / /
33rd Author's Affiliation ()
()
34th Author's Name / /
34th Author's Affiliation ()
()
35th Author's Name / /
35th Author's Affiliation ()
()
36th Author's Name / /
36th Author's Affiliation ()
()
Speaker Author-1 
Date Time 2011-11-17 10:55:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2011-75, CPM2011-124, LQE2011-98 
Volume (vol) vol.111 
Number (no) no.290(ED), no.291(CPM), no.292(LQE) 
Page pp.11-14 
#Pages 4 
Date of Issue 2011-11-10 (ED, CPM, LQE) 

[Return to Top Page]

[Return to IEICE Web Page]
The Institute of Electronics, Information and Communication Engineers (IEICE), Japan