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Paper Abstract and Keywords
Presentation 2011-11-17 16:05
High-accuracy equivalent-circuit-model for GaN-GIT bi-directional switch
Toshihide Ide, Mitsuaki Shimizu, Xu-Qiang Shen (AIST), Tatsuo Morita, Tetsuzo Ueda, Tsuyoshi Tanaka (Panasonic) ED2011-84 CPM2011-133 LQE2011-107
Abstract (in Japanese) (See Japanese page) 
(in English) GaN-Gate Injection Transistor(GIT) Bi-directional Switches (BDSWs) is capable of the low on-resistance operation as compared with typical switching devices, and by employing GaN GIT-BDSWs in the switching circuit, the reduction of a number of the devices and a switching loss are expected. In this study, we propose the equivalent-circuit-model for GaN GIT-BDSWs in order to design switching circuits employing these devices. Although the GIT-BDSWs have four terminals, the equivalent-circuit-model for those consists of three terminals, one gate and two sources, because one gate keeps opened during switching the other gate in the typical operation. The circuit elements in the equivalent-circuit-model consist of one current source and three capacitances. The parameters of the circuit elements are extracted with high accuracy due to the extraction form the switching characteristics. When the switching waveforms and losses in the chopper circuit are calculated by this model, the accuracy of the calculation for the experiments exceeds 90%.
Keyword (in Japanese) (See Japanese page) 
(in English) GaN / Gate Insulated Transistor (GIT) / Bi-directional Switch / Equivalent-circuit-model / / / /  
Reference Info. IEICE Tech. Rep., vol. 111, no. 292, LQE2011-107, pp. 55-60, Nov. 2011.
Paper # LQE2011-107 
Date of Issue 2011-11-10 (ED, CPM, LQE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2011-84 CPM2011-133 LQE2011-107

Conference Information
Committee LQE ED CPM  
Conference Date 2011-11-17 - 2011-11-18 
Place (in Japanese) (See Japanese page) 
Place (in English) Katsura Hall，Kyoto Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To LQE 
Conference Code 2011-11-LQE-ED-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) High-accuracy equivalent-circuit-model for GaN-GIT bi-directional switch 
Sub Title (in English)  
Keyword(1) GaN  
Keyword(2) Gate Insulated Transistor (GIT)  
Keyword(3) Bi-directional Switch  
Keyword(4) Equivalent-circuit-model  
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1st Author's Name Toshihide Ide  
1st Author's Affiliation Advanced Industrial Science and Technology (AIST)
2nd Author's Name Mitsuaki Shimizu  
2nd Author's Affiliation Advanced Industrial Science and Technology (AIST)
3rd Author's Name Xu-Qiang Shen  
3rd Author's Affiliation Advanced Industrial Science and Technology (AIST)
4th Author's Name Tatsuo Morita  
4th Author's Affiliation Panasonic (Panasonic)
5th Author's Name Tetsuzo Ueda  
5th Author's Affiliation Panasonic (Panasonic)
6th Author's Name Tsuyoshi Tanaka  
6th Author's Affiliation Panasonic (Panasonic)
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Speaker Author-1 
Date Time 2011-11-17 16:05:00 
Presentation Time 25 minutes 
Registration for LQE 
Paper # ED2011-84, CPM2011-133, LQE2011-107 
Volume (vol) vol.111 
Number (no) no.290(ED), no.291(CPM), no.292(LQE) 
Page pp.55-60 
#Pages 6 
Date of Issue 2011-11-10 (ED, CPM, LQE) 

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