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Paper Abstract and Keywords
Presentation 2011-11-17 10:30
Control of interlayer on MOVPE growth of AlN on sapphire substrate
Reina Miyagawa, Shibo Yang, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Takaaki Kuwahara, Noriyuki Kuwano, Masatoshi Mitsuhara (Kyushu Univ.) ED2011-74 CPM2011-123 LQE2011-97
Abstract (in Japanese) (See Japanese page) 
(in English) The strong demands for high-efficiency light-emitting diodes and for high-sensitivity sensors in the deep-ultraviolet (UV) region has led to renewed interest in the growth of high-quality AlN. We have studied growth of high-quality AlN with a nucleation layer method. The growth conditions of a medium-temperature (MT-) AlN nucleation layer were examined the interface of the AlN and sapphire substrate. AlN layer with a highly crystalline quality of small tilting and twisting was obtained when the growth temperature of MT-AlN was 1250 oC; however, the surface of AlN was rough because of the mixture of crystallographic polarity. On the other hand, for an AlN layer on the MT-AlN grown at 1100 oC, both the tilt and surface morphology improved, although a future challenge is to reduce twist, but the was not much reduced. For further high-crystalline AlN growth, effects of the carrier gas ratio and growth temperature are examined with the aim of optimizing the growth conditions of high-temperature (HT-) AlN. As a result, with increasing ratio of N2 in the carrier gas, the radius of curvature of the AlN layer increased and the compressive strain decreased. The reduction of compressive strain and increase in curvature of the AlN layer were due to an increase in the number of dislocations.
Keyword (in Japanese) (See Japanese page) 
(in English) AlN / MOVPE / sapphire / interlayer / / / /  
Reference Info. IEICE Tech. Rep., vol. 111, no. 290, ED2011-74, pp. 5-10, Nov. 2011.
Paper # ED2011-74 
Date of Issue 2011-11-10 (ED, CPM, LQE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2011-74 CPM2011-123 LQE2011-97

Conference Information
Committee LQE ED CPM  
Conference Date 2011-11-17 - 2011-11-18 
Place (in Japanese) (See Japanese page) 
Place (in English) Katsura Hall，Kyoto Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ED 
Conference Code 2011-11-LQE-ED-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Control of interlayer on MOVPE growth of AlN on sapphire substrate 
Sub Title (in English)  
Keyword(1) AlN  
Keyword(2) MOVPE  
Keyword(3) sapphire  
Keyword(4) interlayer  
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1st Author's Name Reina Miyagawa  
1st Author's Affiliation Mie University (Mie Univ.)
2nd Author's Name Shibo Yang  
2nd Author's Affiliation Mie University (Mie Univ.)
3rd Author's Name Hideto Miyake  
3rd Author's Affiliation Mie University (Mie Univ.)
4th Author's Name Kazumasa Hiramatsu  
4th Author's Affiliation Mie University (Mie Univ.)
5th Author's Name Takaaki Kuwahara  
5th Author's Affiliation Kyushu University (Kyushu Univ.)
6th Author's Name Noriyuki Kuwano  
6th Author's Affiliation Kyushu University (Kyushu Univ.)
7th Author's Name Masatoshi Mitsuhara  
7th Author's Affiliation Kyushu Universuty (Kyushu Univ.)
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Speaker Author-1 
Date Time 2011-11-17 10:30:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2011-74, CPM2011-123, LQE2011-97 
Volume (vol) vol.111 
Number (no) no.290(ED), no.291(CPM), no.292(LQE) 
Page pp.5-10 
#Pages 6 
Date of Issue 2011-11-10 (ED, CPM, LQE) 

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