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Paper Abstract and Keywords
Presentation 2011-11-17 17:10
Ultraviolet Photodetectors using Transparent Gate AlGaN/GaN-HEMT
Tomotaka Narita, Akio Wakejima, Takashi Egawa (NIT) ED2011-86 CPM2011-135 LQE2011-109
Abstract (in Japanese) (See Japanese page) 
(in English) Transparent gate AlGaN/GaN HEMT(High Electron Mobility Transistor) on a Si substrate was fabricated. We estimated as characteristics of DC and UV detectors by UV and visible light irradiation from the surface side. A significant drain current increase and a negative threshold-voltage shift occurred by UV light irradiation. Thus photogenerated carriers under transparent gate electrode were observed. The gate electrode enabled the device to operate under pinch-off conditions, resulted in low dark current. A high responsivity of 3×105A/W at 200μW/cm2 under a wavelength of 360nm was obtained.
Keyword (in Japanese) (See Japanese page) 
(in English) GaN / AlGaN / HEMT / UV photodetectors / / / /  
Reference Info. IEICE Tech. Rep., vol. 111, no. 290, ED2011-86, pp. 67-70, Nov. 2011.
Paper # ED2011-86 
Date of Issue 2011-11-10 (ED, CPM, LQE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2011-86 CPM2011-135 LQE2011-109

Conference Information
Committee LQE ED CPM  
Conference Date 2011-11-17 - 2011-11-18 
Place (in Japanese) (See Japanese page) 
Place (in English) Katsura Hall，Kyoto Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ED 
Conference Code 2011-11-LQE-ED-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Ultraviolet Photodetectors using Transparent Gate AlGaN/GaN-HEMT 
Sub Title (in English)  
Keyword(1) GaN  
Keyword(2) AlGaN  
Keyword(3) HEMT  
Keyword(4) UV photodetectors  
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Keyword(6)  
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1st Author's Name Tomotaka Narita  
1st Author's Affiliation Nagoya Institute of Technology (NIT)
2nd Author's Name Akio Wakejima  
2nd Author's Affiliation Nagoya Institute of Technology (NIT)
3rd Author's Name Takashi Egawa  
3rd Author's Affiliation Nagoya Institute of Technology (NIT)
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Speaker Author-1 
Date Time 2011-11-17 17:10:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2011-86, CPM2011-135, LQE2011-109 
Volume (vol) vol.111 
Number (no) no.290(ED), no.291(CPM), no.292(LQE) 
Page pp.67-70 
#Pages 4 
Date of Issue 2011-11-10 (ED, CPM, LQE) 

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