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| Presentation | 2011-11-18 10:20 2D-mapping measurement of residual strain in GaN substrates by micro-reflectance spectroscopy Atsushi Yamaguchi (Kanazawa Inst. Tech.), H. Y. Geng, Haruo Sunakawa, Y. Ishihara, Toshiharu Matsueda, Akira Usui (Furukawa)  ED2011-90 CPM2011-139 LQE2011-113 Link to ES Tech. Rep. Archives: ED2011-90 CPM2011-139 LQE2011-113 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | We have developed a novel method to precisely measure very small residual strains (~0.01%) in GaN substrates with micron-order spatial resolution. Strain components are estimated from exciton energies in low-temperature reflectance spectra measured under an optical microscope. The high strain sensitivity comes from high sensitivity of valence-band energy positions, which are directly connected with the exciton energies, to strain components. The method was applied for GaN substrates fabricated by different techniques, and it is found that strain depth profiles largely depend on fabrication techniques. Furthermore, we will discuss the possibility of simultaneous 2D-mapping measurements of strain components and carrier concentrations which could be estimated from the broadening factors of exciton signals in reflectance spectra. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | GaN substrate / residual strain / valence band / reflectance spectroscopy / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 111, no. 292, LQE2011-113, pp. 87-91, Nov. 2011. | |
| Paper # | LQE2011-113 | |
| Date of Issue | 2011-11-10 (ED, CPM, LQE) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2011-90 CPM2011-139 LQE2011-113 Link to ES Tech. Rep. Archives: ED2011-90 CPM2011-139 LQE2011-113 |
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| Conference Information | |
| Committee | LQE ED CPM |
| Conference Date | 2011-11-17 - 2011-11-18 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Katsura Hall，Kyoto Univ. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | LQE |
| Conference Code | 2011-11-LQE-ED-CPM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | 2D-mapping measurement of residual strain in GaN substrates by micro-reflectance spectroscopy |
| Sub Title (in English) | |
| Keyword(1) | GaN substrate |
| Keyword(2) | residual strain |
| Keyword(3) | valence band |
| Keyword(4) | reflectance spectroscopy |
| Keyword(5) | |
| Keyword(6) | |
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| 1st Author's Name | Atsushi Yamaguchi |
| 1st Author's Affiliation | Kanazawa Institute of Technology (Kanazawa Inst. Tech.) |
| 2nd Author's Name | H. Y. Geng |
| 2nd Author's Affiliation | Furukawa Co.Ltd (Furukawa) |
| 3rd Author's Name | Haruo Sunakawa |
| 3rd Author's Affiliation | Furukawa Co.Ltd (Furukawa) |
| 4th Author's Name | Y. Ishihara |
| 4th Author's Affiliation | Furukawa Co.Ltd (Furukawa) |
| 5th Author's Name | Toshiharu Matsueda |
| 5th Author's Affiliation | Furukawa Co.Ltd (Furukawa) |
| 6th Author's Name | Akira Usui |
| 6th Author's Affiliation | Furukawa Co.Ltd (Furukawa) |
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| Speaker | Author-1 |
| Date Time | 2011-11-18 10:20:00 |
| Presentation Time | 25 minutes |
| Registration for | LQE |
| Paper # | ED2011-90, CPM2011-139, LQE2011-113 |
| Volume (vol) | vol.111 |
| Number (no) | no.290(ED), no.291(CPM), no.292(LQE) |
| Page | pp.87-91 |
| #Pages | 5 |
| Date of Issue | 2011-11-10 (ED, CPM, LQE) |
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