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Paper Abstract and Keywords
Presentation 2011-12-16 14:40
Characterization and Modeling of Drain Overshoot Current in Poly-Si Thin Film Transistors
Toshifumi Ota, Hiroshi Tsuji, Yoshinari Kamakura, Kenji Taniguchi (Osaka Univ.) SDM2011-142
Abstract (in Japanese) (See Japanese page) 
(in English) Transient characteristics of drain current in poly-Si thin film transistors (TFTs) are investigated experimentally, and models are proposed to understand the observed characteristics. We consider two mechanisms responsible for causing the overshoot current, i.e., the electron trapping effect and the self-heating effect, and the measurement technique to evaluate separately these two effects are newly developed by changing the terminals on which a step voltage is applied. It is shown that time-decay characteristics induced by these two effects are similar, exhibiting stretched exponential type relaxation. However, the dependence on the applied voltage and device geometry is different; the electron trapping effect becomes prominent in lower $V_g$ conditions, while the self-heating effect is important in wider TFTs biased with higher input power. Finally, we try to discuss about a model for the overshoot current induced by self-heating effect.
Keyword (in Japanese) (See Japanese page) 
(in English) poly-Si TFT / overshoot current / transient response / self-heating effect / electron trapping effect / / /  
Reference Info. IEICE Tech. Rep., vol. 111, no. 357, SDM2011-142, pp. 53-58, Dec. 2011.
Paper # SDM2011-142 
Date of Issue 2011-12-09 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee SDM  
Conference Date 2011-12-16 - 2011-12-16 
Place (in Japanese) (See Japanese page) 
Place (in English) NAIST 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Fabrication and Evaluation of Silicon related Materials 
Paper Information
Registration To SDM 
Conference Code 2011-12-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Characterization and Modeling of Drain Overshoot Current in Poly-Si Thin Film Transistors 
Sub Title (in English)  
Keyword(1) poly-Si TFT  
Keyword(2) overshoot current  
Keyword(3) transient response  
Keyword(4) self-heating effect  
Keyword(5) electron trapping effect  
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Keyword(7)  
Keyword(8)  
1st Author's Name Toshifumi Ota  
1st Author's Affiliation Osaka University (Osaka Univ.)
2nd Author's Name Hiroshi Tsuji  
2nd Author's Affiliation Osaka University (Osaka Univ.)
3rd Author's Name Yoshinari Kamakura  
3rd Author's Affiliation Osaka University (Osaka Univ.)
4th Author's Name Kenji Taniguchi  
4th Author's Affiliation Osaka University (Osaka Univ.)
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Speaker Author-1 
Date Time 2011-12-16 14:40:00 
Presentation Time 20 minutes 
Registration for SDM 
Paper # SDM2011-142 
Volume (vol) vol.111 
Number (no) no.357 
Page pp.53-58 
#Pages 6 
Date of Issue 2011-12-09 (SDM) 

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