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Paper Abstract and Keywords
Presentation 2011-12-16 15:40
Proposal of Optimized Structure of X-Ray Detectors Reducing Effect of Fixed Charges at SiO2/Si interface
Ryota Okada, Seiji Nishikawa, Hideharu Matsuura (Osaka Electro-Communication Univ.) SDM2011-144
Abstract (in Japanese) (See Japanese page) 
(in English) Several regulations for hazardous substances have been enforced due to the increase of awareness of environmental issues. To detect a trace of hazardous materials on site, inexpensive and transportable X-ray fluorescence spectrometers are required. To reduce a cost of X-ray detectors, we have tried to simplify commercial X-ray detectors (Silicon Drift Detector: SDD) with metal-oxide-semiconductor field-effect transistors (MOSFET) between approximately 18 rings, and we have proposed a simple-structure SDD with one ring and without MOSFETs (one-ring SDD). By the results of device simulation, however, it is found that positive fixed charges in the protective oxide film near the SiO2/Si interface make the realization of one-ring SDD difficult. In this study, a new device structure of X-ray detectors, called a gated SDD (GSDD), is proposed, and investigated by device simulation. To enhance sensitivities of high-energy X-rays, moreover, the possibilities for GSDD with thicker Si are investigated.
Keyword (in Japanese) (See Japanese page) 
(in English) Silicon Drift Detector / Gated SDD / X-ray Detector / Low-Cost Detector / Thicker GSDD / / /  
Reference Info. IEICE Tech. Rep., vol. 111, no. 357, SDM2011-144, pp. 65-70, Dec. 2011.
Paper # SDM2011-144 
Date of Issue 2011-12-09 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee SDM  
Conference Date 2011-12-16 - 2011-12-16 
Place (in Japanese) (See Japanese page) 
Place (in English) NAIST 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Fabrication and Evaluation of Silicon related Materials 
Paper Information
Registration To SDM 
Conference Code 2011-12-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Proposal of Optimized Structure of X-Ray Detectors Reducing Effect of Fixed Charges at SiO2/Si interface 
Sub Title (in English)  
Keyword(1) Silicon Drift Detector  
Keyword(2) Gated SDD  
Keyword(3) X-ray Detector  
Keyword(4) Low-Cost Detector  
Keyword(5) Thicker GSDD  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Ryota Okada  
1st Author's Affiliation Osaka Electro-Communication University (Osaka Electro-Communication Univ.)
2nd Author's Name Seiji Nishikawa  
2nd Author's Affiliation Osaka Electro-Communication University (Osaka Electro-Communication Univ.)
3rd Author's Name Hideharu Matsuura  
3rd Author's Affiliation Osaka Electro-Communication University (Osaka Electro-Communication Univ.)
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Speaker Author-1 
Date Time 2011-12-16 15:40:00 
Presentation Time 20 minutes 
Registration for SDM 
Paper # SDM2011-144 
Volume (vol) vol.111 
Number (no) no.357 
Page pp.65-70 
#Pages 6 
Date of Issue 2011-12-09 (SDM) 

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