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Paper Abstract and Keywords
Presentation 2012-01-12 12:50
Analusis of Buffer-Impurity and Field-Plate Effects on Breakdown Performance in Small-Sized AlGaN/GaN HEMTs
Hiraku Onodera, Atsushi Nakajima, Kazushige Horio (Shibaura Inst. Tech.) ED2011-133 MW2011-156 Link to ES Tech. Rep. Archives: ED2011-133 MW2011-156
Abstract (in Japanese) (See Japanese page) 
(in English) In this work, we perform two-dimensional analysis of breakdown characteristics in field-plate AlGaN/GaN HEMTs with a short gate length and a short gate-to-drain distance. It is shown that when an acceptor density in a buffer layer is high, the breakdown voltage is determined by impact ionization of carriers, and it can decrease with increasing the field-plate length. On the other hand, when the acceptor density in the buffer layer is low, the buffer leakage current becomes very large and this can determine the breakdown voltage, which becomes very low. In this case, the breakdown voltage increases with increasing the field-plate length.
Keyword (in Japanese) (See Japanese page) 
(in English) GaN / HEMT / field plate / breakdown voltage / buffer trap / two-dimensional analysis / /  
Reference Info. IEICE Tech. Rep., vol. 111, no. 373, ED2011-133, pp. 81-85, Jan. 2012.
Paper # ED2011-133 
Date of Issue 2012-01-04 (ED, MW) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2011-133 MW2011-156 Link to ES Tech. Rep. Archives: ED2011-133 MW2011-156

Conference Information
Committee ED MW  
Conference Date 2012-01-11 - 2012-01-12 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ED 
Conference Code 2012-01-ED-MW 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Analusis of Buffer-Impurity and Field-Plate Effects on Breakdown Performance in Small-Sized AlGaN/GaN HEMTs 
Sub Title (in English)  
Keyword(1) GaN  
Keyword(2) HEMT  
Keyword(3) field plate  
Keyword(4) breakdown voltage  
Keyword(5) buffer trap  
Keyword(6) two-dimensional analysis  
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Keyword(8)  
1st Author's Name Hiraku Onodera  
1st Author's Affiliation Shibaura Institute of Technology (Shibaura Inst. Tech.)
2nd Author's Name Atsushi Nakajima  
2nd Author's Affiliation Shibaura Institute of Technology (Shibaura Inst. Tech.)
3rd Author's Name Kazushige Horio  
3rd Author's Affiliation Shibaura Institute of Technology (Shibaura Inst. Tech.)
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Speaker Author-1 
Date Time 2012-01-12 12:50:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2011-133, MW2011-156 
Volume (vol) vol.111 
Number (no) no.373(ED), no.374(MW) 
Page pp.81-85 
#Pages
Date of Issue 2012-01-04 (ED, MW) 


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