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Paper Abstract and Keywords
Presentation 2012-02-07 14:35
KFM observation of individual dopant potentials and electron charging
Roland Nowak, Miftahul Anwar, Daniel Moraru, Takeshi Mizuno (Shizuoka Univ.), Ryszard Jablonski (Warsaw Univ. of Tech.), Michiharu Tabe (Shizuoka Univ.) ED2011-144 SDM2011-161
Abstract (in Japanese) (See Japanese page) 
(in English) We utilize Kelvin probe force microscope (KFM) to measure surface potential of thin channel of nanoscale field effect transistor and characterize the effect of electron injection. At low temperature, we observe that potentials of individual dopants disappear in digital manner, which corresponds to single-electron trapping by a donor. At room temperature, on the other hand, we conclude from the KFM observations that dopants potentials are continuously screened by non-localized electrons. Both types of screening mechanisms are correlated with transport mechanisms, i.e. electron tunneling through donors at low temperature and drift-diffusion current at room temperature.
Keyword (in Japanese) (See Japanese page) 
(in English) Kelvin Probe Force Microscope / silicon-on-insulator field-effect transistor / single-electron charging / / / / /  
Reference Info. IEICE Tech. Rep., vol. 111, no. 425, ED2011-144, pp. 13-18, Feb. 2012.
Paper # ED2011-144 
Date of Issue 2012-01-31 (ED, SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2011-144 SDM2011-161

Conference Information
Committee ED SDM  
Conference Date 2012-02-07 - 2012-02-08 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ED 
Conference Code 2012-02-ED-SDM 
Language English 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) KFM observation of individual dopant potentials and electron charging 
Sub Title (in English)  
Keyword(1) Kelvin Probe Force Microscope  
Keyword(2) silicon-on-insulator field-effect transistor  
Keyword(3) single-electron charging  
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1st Author's Name Roland Nowak  
1st Author's Affiliation Shizuoka University (Shizuoka Univ.)
2nd Author's Name Miftahul Anwar  
2nd Author's Affiliation Shizuoka University (Shizuoka Univ.)
3rd Author's Name Daniel Moraru  
3rd Author's Affiliation Shizuoka University (Shizuoka Univ.)
4th Author's Name Takeshi Mizuno  
4th Author's Affiliation Shizuoka University (Shizuoka Univ.)
5th Author's Name Ryszard Jablonski  
5th Author's Affiliation Warsaw University of Technology (Warsaw Univ. of Tech.)
6th Author's Name Michiharu Tabe  
6th Author's Affiliation Shizuoka University (Shizuoka Univ.)
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Speaker Author-1 
Date Time 2012-02-07 14:35:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2011-144, SDM2011-161 
Volume (vol) vol.111 
Number (no) no.425(ED), no.426(SDM) 
Page pp.13-18 
#Pages 6 
Date of Issue 2012-01-31 (ED, SDM) 

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