Information: Join today and make your research activities more affordable! Technical workshop participation fees and annual registration fees are available at member rates.
Notice: [Important] Announcement of Changes to Registration Fee Payment and Manuscript Upload Procedures for IEICE Technical Meetings
IEICE Technical Committee Submission System
Conference Paper's Information		 Online Proceedings
[Sign in]
Tech. Rep. Archives
 Go Top Page Go Previous   [Japanese] / [English] 

Paper Abstract and Keywords
Presentation 2012-02-07 14:10
Ab initio Analysis of Electronic States for Single Phosphorus Dopants in Silicon Nanorod Transistors
Youhei Kuzuya, Daniel Moraru, Takeshi Mizuno, Michiharu Tabe (Shizuoka Univ.), Hiroshi Mizuta (JAIST/Univ. of Southampton) ED2011-143 SDM2011-160
Abstract (in Japanese) (See Japanese page) 
(in English) Dopant-induced fluctuation of MOSFET characteristics along with device miniaturization has been recognized as a serious problem for further development of Si technology. We study this issue from a different viewpoint and try to develop novel devices which utilize individual dopant atoms as quantum dots. In this regard, it is important to investigate electronic states of dopant in Si nano structures. We performed first-principle simulation of electronic states for phosphorus donors in a Si nano-channel. In this paper, we report on phosphorus donor levels, ionization energy and spatial distribution of electronic states in Si nano channels.
Keyword (in Japanese) (See Japanese page) 
(in English) Ab initio / ionization energy / spatial distribution of electronic / nano / MOSFET / / /  
Reference Info. IEICE Tech. Rep., vol. 111, no. 426, SDM2011-160, pp. 7-11, Feb. 2012.
Paper # SDM2011-160 
Date of Issue 2012-01-31 (ED, SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2011-143 SDM2011-160

Conference Information
Committee ED SDM  
Conference Date 2012-02-07 - 2012-02-08 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To SDM 
Conference Code 2012-02-ED-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Ab initio Analysis of Electronic States for Single Phosphorus Dopants in Silicon Nanorod Transistors 
Sub Title (in English)  
Keyword(1) Ab initio  
Keyword(2) ionization energy  
Keyword(3) spatial distribution of electronic  
Keyword(4) nano  
Keyword(5) MOSFET  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Youhei Kuzuya  
1st Author's Affiliation Shizuoka University (Shizuoka Univ.)
2nd Author's Name Daniel Moraru  
2nd Author's Affiliation Shizuoka University (Shizuoka Univ.)
3rd Author's Name Takeshi Mizuno  
3rd Author's Affiliation Shizuoka University (Shizuoka Univ.)
4th Author's Name Michiharu Tabe  
4th Author's Affiliation Shizuoka University (Shizuoka Univ.)
5th Author's Name Hiroshi Mizuta  
5th Author's Affiliation Japan Advanced Institute of Science and Technology/University of Southampton (JAIST/Univ. of Southampton)
6th Author's Name  
6th Author's Affiliation ()
7th Author's Name  
7th Author's Affiliation ()
8th Author's Name  
8th Author's Affiliation ()
9th Author's Name  
9th Author's Affiliation ()
10th Author's Name  
10th Author's Affiliation ()
11th Author's Name  
11th Author's Affiliation ()
12th Author's Name  
12th Author's Affiliation ()
13th Author's Name  
13th Author's Affiliation ()
14th Author's Name  
14th Author's Affiliation ()
15th Author's Name  
15th Author's Affiliation ()
16th Author's Name  
16th Author's Affiliation ()
17th Author's Name  
17th Author's Affiliation ()
18th Author's Name  
18th Author's Affiliation ()
19th Author's Name  
19th Author's Affiliation ()
20th Author's Name  
20th Author's Affiliation ()
21st Author's Name  
21st Author's Affiliation ()
22nd Author's Name  
22nd Author's Affiliation ()
23rd Author's Name  
23rd Author's Affiliation ()
24th Author's Name  
24th Author's Affiliation ()
25th Author's Name  
25th Author's Affiliation ()
26th Author's Name / /
26th Author's Affiliation ()
()
27th Author's Name / /
27th Author's Affiliation ()
()
28th Author's Name / /
28th Author's Affiliation ()
()
29th Author's Name / /
29th Author's Affiliation ()
()
30th Author's Name / /
30th Author's Affiliation ()
()
31st Author's Name / /
31st Author's Affiliation ()
()
32nd Author's Name / /
32nd Author's Affiliation ()
()
33rd Author's Name / /
33rd Author's Affiliation ()
()
34th Author's Name / /
34th Author's Affiliation ()
()
35th Author's Name / /
35th Author's Affiliation ()
()
36th Author's Name / /
36th Author's Affiliation ()
()
Speaker Author-1 
Date Time 2012-02-07 14:10:00 
Presentation Time 25 minutes 
Registration for SDM 
Paper # ED2011-143, SDM2011-160 
Volume (vol) vol.111 
Number (no) no.425(ED), no.426(SDM) 
Page pp.7-11 
#Pages 5 
Date of Issue 2012-01-31 (ED, SDM) 

[Return to Top Page]

[Return to IEICE Web Page]
The Institute of Electronics, Information and Communication Engineers (IEICE), Japan