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Paper Abstract and Keywords
Presentation 2012-02-08 11:25
Stochastic resonance using a steep-subthreshold-swing transistor
Katsuhiko Nishiguchi, Akira Fujiwara (NTT) ED2011-154 SDM2011-171
Abstract (in Japanese) (See Japanese page) 
(in English) We demonstrate stochastic resonance (SR) using nanoscale metal-oxide-semiconductor field-effect transistors (MOSFETs) with small subthreshold swing. The MOSFET has a wire channel with triple gates and shows current characteristics, whose subthreshold swing is much smaller than 60 mV/dec owing to a parasitic bipolar transistor. The strong nonlinearity and hysteresis of current characteristics of the MOSFET increase the effect of SR, which allows the MOSFET to output a signal similar to an input signal, which is much smaller than threshold voltage of a MOSFET. Additionally, using these features, we demonstrated pattern cryptography as a new application of SR.
Keyword (in Japanese) (See Japanese page) 
(in English) transistor / stochastic resonance / sensor / / / / /  
Reference Info. IEICE Tech. Rep., vol. 111, no. 425, ED2011-154, pp. 71-76, Feb. 2012.
Paper # ED2011-154 
Date of Issue 2012-01-31 (ED, SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2011-154 SDM2011-171

Conference Information
Committee ED SDM  
Conference Date 2012-02-07 - 2012-02-08 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ED 
Conference Code 2012-02-ED-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Stochastic resonance using a steep-subthreshold-swing transistor 
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Keyword(1) transistor  
Keyword(2) stochastic resonance  
Keyword(3) sensor  
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1st Author's Name Katsuhiko Nishiguchi  
1st Author's Affiliation NTT Basic Research Laboratories (NTT)
2nd Author's Name Akira Fujiwara  
2nd Author's Affiliation NTT Basic Research Laboratories (NTT)
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Speaker Author-1 
Date Time 2012-02-08 11:25:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2011-154, SDM2011-171 
Volume (vol) vol.111 
Number (no) no.425(ED), no.426(SDM) 
Page pp.71-76 
#Pages 6 
Date of Issue 2012-01-31 (ED, SDM) 

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