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| Presentation | 2012-03-05 11:20 Highly Reliable BEOL-Transistor with oxygen-controlled InGaZnO channel and Gate/Drain Offset design Kishou Kaneko, Naoya Inoue, Shinobu Saito, Naoya Furutake, Hiroshi Sunamura, Jun Kawahara, Masami Hane, Yoshihiro Hayashi (Renesas Electronics)  SDM2011-178 Link to ES Tech. Rep. Archives: SDM2011-178 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Reliability of BEOL-transistors with a wide-gap oxide semiconductor InGaZnO film for high-voltage interface, integrated into LSI Cu-interconnects at low cost, is discussed in terms of improvements of device reliabilities. The oxygen control in IGZO reduces deep donor-states to improve temperature stability and Vth shift. A gate/drain offset structure effectively suppresses the gate leakage current, resulting in a stable operation at high Vd bias condition (~20V). The oxygen-controlled IGZO and gate/drain offset structure are important for making the BEOL-transistors applicable to high/low voltage I/Os bridging. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | InGaZnO / BEOL / Transistor / wide-gap / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 111, no. 463, SDM2011-178, pp. 13-17, March 2012. | |
| Paper # | SDM2011-178 | |
| Date of Issue | 2012-02-27 (SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | SDM2011-178 Link to ES Tech. Rep. Archives: SDM2011-178 |
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| Conference Information | |
| Committee | SDM |
| Conference Date | 2012-03-05 - 2012-03-05 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kikai-Shinko-Kaikan Bldg. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Wiring and Assembly Technology, etc |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2012-03-SDM |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Highly Reliable BEOL-Transistor with oxygen-controlled InGaZnO channel and Gate/Drain Offset design |
| Sub Title (in English) | |
| Keyword(1) | InGaZnO |
| Keyword(2) | BEOL |
| Keyword(3) | Transistor |
| Keyword(4) | wide-gap |
| Keyword(5) | |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Kishou Kaneko |
| 1st Author's Affiliation | Renesas Electronics Corporation (Renesas Electronics) |
| 2nd Author's Name | Naoya Inoue |
| 2nd Author's Affiliation | Renesas Electronics Corporation (Renesas Electronics) |
| 3rd Author's Name | Shinobu Saito |
| 3rd Author's Affiliation | Renesas Electronics Corporation (Renesas Electronics) |
| 4th Author's Name | Naoya Furutake |
| 4th Author's Affiliation | Renesas Electronics Corporation (Renesas Electronics) |
| 5th Author's Name | Hiroshi Sunamura |
| 5th Author's Affiliation | Renesas Electronics Corporation (Renesas Electronics) |
| 6th Author's Name | Jun Kawahara |
| 6th Author's Affiliation | Renesas Electronics Corporation (Renesas Electronics) |
| 7th Author's Name | Masami Hane |
| 7th Author's Affiliation | Renesas Electronics Corporation (Renesas Electronics) |
| 8th Author's Name | Yoshihiro Hayashi |
| 8th Author's Affiliation | Renesas Electronics Corporation (Renesas Electronics) |
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| Speaker | Author-1 |
| Date Time | 2012-03-05 11:20:00 |
| Presentation Time | 30 minutes |
| Registration for | SDM |
| Paper # | SDM2011-178 |
| Volume (vol) | vol.111 |
| Number (no) | no.463 |
| Page | pp.13-17 |
| #Pages | 5 |
| Date of Issue | 2012-02-27 (SDM) |
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