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Paper Abstract and Keywords
Presentation 2012-03-05 10:05
[Keynote Address] Development of Ultra Low Voltage Devices utilizing BEOL Process
Shin'ichiro Kimura (LEAP) SDM2011-176
Abstract (in Japanese) (See Japanese page) 
(in English) Resistive-change non-volatile devices, in which variable resistance materials are embedded during Back-end of Line process, are promising candidate for low voltage/power devices, instead of a conventional MOSFET facing voltage reduction limit. A magneto resistance change device, a phase change device and an atom migration device, which have been under development by project LEAP, are introduced, focusing on progresses and issues as well as a new wafer fabrication scheme that combines a Tsukuba SCR 300-mm line and a 300-mm production line.
Keyword (in Japanese) (See Japanese page) 
(in English) low voltage/power devices / Resistive-change non volatile devices / magneto-resistance change / phase change / atom migration / LEAP / /  
Reference Info. IEICE Tech. Rep., vol. 111, no. 463, SDM2011-176, pp. 1-5, March 2012.
Paper # SDM2011-176 
Date of Issue 2012-02-27 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2011-176

Conference Information
Committee SDM  
Conference Date 2012-03-05 - 2012-03-05 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Wiring and Assembly Technology, etc 
Paper Information
Registration To SDM 
Conference Code 2012-03-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Development of Ultra Low Voltage Devices utilizing BEOL Process 
Sub Title (in English)  
Keyword(1) low voltage/power devices  
Keyword(2) Resistive-change non volatile devices  
Keyword(3) magneto-resistance change  
Keyword(4) phase change  
Keyword(5) atom migration  
Keyword(6) LEAP  
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Keyword(8)  
1st Author's Name Shin'ichiro Kimura  
1st Author's Affiliation Low-power Electronics Association & Project (LEAP)
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Speaker Author-1 
Date Time 2012-03-05 10:05:00 
Presentation Time 45 minutes 
Registration for SDM 
Paper # SDM2011-176 
Volume (vol) vol.111 
Number (no) no.463 
Page pp.1-5 
#Pages 5 
Date of Issue 2012-02-27 (SDM) 

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