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Paper Abstract and Keywords
Presentation 2012-04-23 13:20
[Invited Talk] 128Gb 3-Bit Per Cell NAND Flash Memory on 19nm Technology with 18MB/s Write Rate
Teruhiko Kamei, Yan Li, Seungpil Lee, Ken Oowada, Hao Nguyen, Qui Nguyen, Nima Mokhlesi, Cynthia Hsu, Jason Li, Venky Ramachandra, Masaaki Higashitani, Tuan Pham, Mitsuyuki Watanabe (SanDisk), Mitsuaki Honma, Yoshihisa Watanabe (Toshiba) ICD2012-2
Abstract (in Japanese) (See Japanese page) 
(in English) A 128Gb 8-level NAND flash memory using 19nm CMOS technology has been developed. 128Gb is the largest single-chip capacity NAND memory. At 170mm2 die size, this development achieves the highest Gb/mm2 in NAND flash memory. In addition to All Bit-Line (ABL) programming and sensing, Air Gap technology and a Toggle Mode 400Mbps I/O interface, along with improvements in sensing accuracy, enable this 3-bit per cell (X3) design to achieve a write throughput of 18MB/s using standard BCH ECC.
Keyword (in Japanese) (See Japanese page) 
(in English) NAND Flash Memory / 3bit/cell / MLC / 19nm CMOS / / / /  
Reference Info. IEICE Tech. Rep., vol. 112, no. 15, ICD2012-2, pp. 7-12, April 2012.
Paper # ICD2012-2 
Date of Issue 2012-04-16 (ICD) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee ICD  
Conference Date 2012-04-23 - 2012-04-24 
Place (in Japanese) (See Japanese page) 
Place (in English) Seion-so, Tsunagi Hot Spring (Iwate) 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Memory Device Technologies 
Paper Information
Registration To ICD 
Conference Code 2012-04-ICD 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) 128Gb 3-Bit Per Cell NAND Flash Memory on 19nm Technology with 18MB/s Write Rate 
Sub Title (in English)  
Keyword(1) NAND Flash Memory  
Keyword(2) 3bit/cell  
Keyword(3) MLC  
Keyword(4) 19nm CMOS  
Keyword(5)  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Teruhiko Kamei  
1st Author's Affiliation SanDisk Limited (SanDisk)
2nd Author's Name Yan Li  
2nd Author's Affiliation SanDisk Corporation (SanDisk)
3rd Author's Name Seungpil Lee  
3rd Author's Affiliation SanDisk Corporation (SanDisk)
4th Author's Name Ken Oowada  
4th Author's Affiliation SanDisk Limited (SanDisk)
5th Author's Name Hao Nguyen  
5th Author's Affiliation SanDisk Corporation (SanDisk)
6th Author's Name Qui Nguyen  
6th Author's Affiliation SanDisk Corporation (SanDisk)
7th Author's Name Nima Mokhlesi  
7th Author's Affiliation SanDisk Corporation (SanDisk)
8th Author's Name Cynthia Hsu  
8th Author's Affiliation SanDisk Corporation (SanDisk)
9th Author's Name Jason Li  
9th Author's Affiliation SanDisk Corporation (SanDisk)
10th Author's Name Venky Ramachandra  
10th Author's Affiliation SanDisk Corporation (SanDisk)
11th Author's Name Masaaki Higashitani  
11th Author's Affiliation SanDisk Corporation (SanDisk)
12th Author's Name Tuan Pham  
12th Author's Affiliation SanDisk Corporation (SanDisk)
13th Author's Name Mitsuyuki Watanabe  
13th Author's Affiliation SanDisk Limited (SanDisk)
14th Author's Name Mitsuaki Honma  
14th Author's Affiliation Toshiba Corporation (Toshiba)
15th Author's Name Yoshihisa Watanabe  
15th Author's Affiliation Toshiba Corporation (Toshiba)
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Speaker Author-1 
Date Time 2012-04-23 13:20:00 
Presentation Time 50 minutes 
Registration for ICD 
Paper # ICD2012-2 
Volume (vol) vol.112 
Number (no) no.15 
Page pp.7-12 
#Pages
Date of Issue 2012-04-16 (ICD) 


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