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Paper Abstract and Keywords
Presentation 2012-05-17 13:00
[Invited Talk] Formation of One-Dimensionally Self-Aligned Si-based Quantum Dots and Its Application to Light Emitting Diodes
Katsunori Makihara (Nagoya Univ.), Mitsuhisa Ikeda (Hiroshima Univ.), Seiichi Miyazaki (Nagoya Univ.) ED2012-17 CPM2012-1 SDM2012-19
Abstract (in Japanese) (See Japanese page) 
(in English) Self-aligned Si quantum dots (Si-QDs) have been successfully fabricated on ultrathin SiO2 by controlling low-pressure chemical vapor deposition (LPCVD) using pure SiH4 and/or Si2H6, selective Ge LPCVD from 5% GeH4 diluted with He, thermal oxidation of the dots and subsequent thermal desorption of Ge oxide. In semitransparent Au-gate diodes with self-aligned dots so-prepared, when carriers were injected to the self-aligned Si-QDs from the n-Si(100) substrate for electrons and from the Au top electrode for holes, electroluminescence (EL) in the near-infrared region at room temperature becomes observable with an increase in current at positive biases over a threshold voltage as low as ~1.2 V at the Au top electrode. Note that, in the case of an areal dot density of ~1013 cm-2, the emission intensity was enhanced markedly by a factor of ~425 in comparison with the case of ~1011 cm-2 under the same current density at ~0.15A/cm2. This is clear evidence of not only an increase in radiative recombination rate in the self-aligned structure but also an improvement of recombination efficiency due to a decrease in current leakage with increasing dot density.
Keyword (in Japanese) (See Japanese page) 
(in English) Si-based Quantum Dots / Self-Aligned Structure / Light Emitting Diodes / LPCVD / / / /  
Reference Info. IEICE Tech. Rep., vol. 112, no. 34, SDM2012-19, pp. 1-6, May 2012.
Paper # SDM2012-19 
Date of Issue 2012-05-10 (ED, CPM, SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2012-17 CPM2012-1 SDM2012-19

Conference Information
Committee ED SDM CPM  
Conference Date 2012-05-17 - 2012-05-18 
Place (in Japanese) (See Japanese page) 
Place (in English) VBL, Toyohashi Univ. of Technol. 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To SDM 
Conference Code 2012-05-ED-SDM-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Formation of One-Dimensionally Self-Aligned Si-based Quantum Dots and Its Application to Light Emitting Diodes 
Sub Title (in English)  
Keyword(1) Si-based Quantum Dots  
Keyword(2) Self-Aligned Structure  
Keyword(3) Light Emitting Diodes  
Keyword(4) LPCVD  
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1st Author's Name Katsunori Makihara  
1st Author's Affiliation Nagoya University (Nagoya Univ.)
2nd Author's Name Mitsuhisa Ikeda  
2nd Author's Affiliation Hiroshima Univ. (Hiroshima Univ.)
3rd Author's Name Seiichi Miyazaki  
3rd Author's Affiliation Nagoya University (Nagoya Univ.)
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Speaker Author-1 
Date Time 2012-05-17 13:00:00 
Presentation Time 40 minutes 
Registration for SDM 
Paper # ED2012-17, CPM2012-1, SDM2012-19 
Volume (vol) vol.112 
Number (no) no.32(ED), no.33(CPM), no.34(SDM) 
Page pp.1-6 
#Pages 6 
Date of Issue 2012-05-10 (ED, CPM, SDM) 

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