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Paper Abstract and Keywords
Presentation 2012-06-21 11:35
Effect of Reducing Character of Gate Metals on Pr Valence State in Pr Oxide Film on Ge Substrate
Kimihiko Kato, Mitsuo Sakashita, Wakana Takeuchi, Noriyuki Taoka, Osamu Nakatsuka, Shigeaki Zaima (Nagoya Univ.) SDM2012-50 Link to ES Tech. Rep. Archives: SDM2012-50
Abstract (in Japanese) (See Japanese page) 
(in English) We have investigated the impact of the gate metal on the chemical bonding state in the metal/Pr-oxide/Ge gate stack structure focusing on the oxygen chemical potential (μO). The reductive character of gate metal reduces the Pr-oxide film, increasing the ratio of the Pr3+ component in Pr-oxide film. The reductive character of metal also affects on the Pr-oxide/Ge interfacial structure. It leads to the decrease in the areal density of Ge bonding with O (Ge-oxide and/or PrGe-oxide). These reducing reactions can be explained by the low μO of metal with reductive character than that of PrO2 formation and GeO2 formation. These results suggest that the selection of gate metal in metal/Pr-oxide/Ge gate stack structure focusing on μO is quite important to achieve the thin EOT, attributing to both the formation of the h-Pr2O3 crystalline phase of Pr-oxide and the decrease in the amount of Ge oxides.
Keyword (in Japanese) (See Japanese page) 
(in English) germanium / praseodymium-oxide / gate metal / reduction reaction / valence state / / /  
Reference Info. IEICE Tech. Rep., vol. 112, no. 92, SDM2012-50, pp. 37-42, June 2012.
Paper # SDM2012-50 
Date of Issue 2012-06-14 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2012-50 Link to ES Tech. Rep. Archives: SDM2012-50

Conference Information
Committee SDM  
Conference Date 2012-06-21 - 2012-06-21 
Place (in Japanese) (See Japanese page) 
Place (in English) VBL, Nagoya Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Science and Technology for Dielectric Thin Films for Electron Devices 
Paper Information
Registration To SDM 
Conference Code 2012-06-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Effect of Reducing Character of Gate Metals on Pr Valence State in Pr Oxide Film on Ge Substrate 
Sub Title (in English)  
Keyword(1) germanium  
Keyword(2) praseodymium-oxide  
Keyword(3) gate metal  
Keyword(4) reduction reaction  
Keyword(5) valence state  
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1st Author's Name Kimihiko Kato  
1st Author's Affiliation Nagoya University (Nagoya Univ.)
2nd Author's Name Mitsuo Sakashita  
2nd Author's Affiliation Nagoya University (Nagoya Univ.)
3rd Author's Name Wakana Takeuchi  
3rd Author's Affiliation Nagoya University (Nagoya Univ.)
4th Author's Name Noriyuki Taoka  
4th Author's Affiliation Nagoya University (Nagoya Univ.)
5th Author's Name Osamu Nakatsuka  
5th Author's Affiliation Nagoya University (Nagoya Univ.)
6th Author's Name Shigeaki Zaima  
6th Author's Affiliation Nagoya University (Nagoya Univ.)
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Speaker Author-1 
Date Time 2012-06-21 11:35:00 
Presentation Time 20 minutes 
Registration for SDM 
Paper # SDM2012-50 
Volume (vol) vol.112 
Number (no) no.92 
Page pp.37-42 
#Pages
Date of Issue 2012-06-14 (SDM) 


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