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Paper Abstract and Keywords
Presentation 2012-06-21 15:05
Detection of impurities having various chemical bonding states and their depth profiles in ultra shallow junctions
Kazuo Tsutsui, Jun Kanehara, Youhei Miyata (Tokyo Tech.), Hiroshi Nohira (Tokyo City Univ.), Yudai Izumi, Takayuki Muro, Toyohiko Kinoshita (JASRI), Parhat Ahmet, Kuniyuki Kakushima, Takeo Hattori, Hiroshi Iwai (Tokyo Tech.) SDM2012-56
Abstract (in Japanese) (See Japanese page) 
(in English) Depth profiles of impurity having different chemical bonding states were evaluated by using soft x-ray photoelectron spectroscopy and a sub-nm etching technique on Si ultra shallow junctions doped with B and As. A particular chemical bonding state was correlated with electrically activated impurity atoms by combining with Hall effect measurements. Inactivated impurity atoms having different chemical bonding states were speculated to form different kinds of clusters. By performing the photoelectron spectroscopy studies on Si Fin structure at two photoelectron take-off angles the chemical bonding states of impurity atoms on top surfaces and sidewalls of the Fin structure were found to be different with each other.
Keyword (in Japanese) (See Japanese page) 
(in English) ultra shallow junction / impurity profile / electrical activation / chemical bonding state / soft x-ray photoelectron spectroscopy / / /  
Reference Info. IEICE Tech. Rep., vol. 112, no. 92, SDM2012-56, pp. 69-74, June 2012.
Paper # SDM2012-56 
Date of Issue 2012-06-14 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee SDM  
Conference Date 2012-06-21 - 2012-06-21 
Place (in Japanese) (See Japanese page) 
Place (in English) VBL, Nagoya Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Science and Technology for Dielectric Thin Films for Electron Devices 
Paper Information
Registration To SDM 
Conference Code 2012-06-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Detection of impurities having various chemical bonding states and their depth profiles in ultra shallow junctions 
Sub Title (in English)  
Keyword(1) ultra shallow junction  
Keyword(2) impurity profile  
Keyword(3) electrical activation  
Keyword(4) chemical bonding state  
Keyword(5) soft x-ray photoelectron spectroscopy  
Keyword(6)  
Keyword(7)  
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1st Author's Name Kazuo Tsutsui  
1st Author's Affiliation Tokyo Institute of Technology (Tokyo Tech.)
2nd Author's Name Jun Kanehara  
2nd Author's Affiliation Tokyo Institute of Technology (Tokyo Tech.)
3rd Author's Name Youhei Miyata  
3rd Author's Affiliation Tokyo Institute of Technology (Tokyo Tech.)
4th Author's Name Hiroshi Nohira  
4th Author's Affiliation Tokyo City University (Tokyo City Univ.)
5th Author's Name Yudai Izumi  
5th Author's Affiliation Japan Synchrotron Radiation Research Institute (JASRI)
6th Author's Name Takayuki Muro  
6th Author's Affiliation Japan Synchrotron Radiation Research Institute (JASRI)
7th Author's Name Toyohiko Kinoshita  
7th Author's Affiliation Japan Synchrotron Radiation Research Institute (JASRI)
8th Author's Name Parhat Ahmet  
8th Author's Affiliation Tokyo Institute of Technology (Tokyo Tech.)
9th Author's Name Kuniyuki Kakushima  
9th Author's Affiliation Tokyo Institute of Technology (Tokyo Tech.)
10th Author's Name Takeo Hattori  
10th Author's Affiliation Tokyo Institute of Technology (Tokyo Tech.)
11th Author's Name Hiroshi Iwai  
11th Author's Affiliation Tokyo Institute of Technology (Tokyo Tech.)
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Speaker Author-1 
Date Time 2012-06-21 15:05:00 
Presentation Time 25 minutes 
Registration for SDM 
Paper # SDM2012-56 
Volume (vol) vol.112 
Number (no) no.92 
Page pp.69-74 
#Pages 6 
Date of Issue 2012-06-14 (SDM) 

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