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Paper Abstract and Keywords
Presentation 2012-06-22 10:30
Demonstration on 20 Gbit/s Direct Modulation of 1.3-µm-Range Metamorphic Laser
Masakazu Arai, Shigeru Kanazawa, Takashi Tadokoro, Masaki Kohtoku (NTT) OPE2012-11 LQE2012-15
Abstract (in Japanese) (See Japanese page) 
(in English) There is a strong demand for the efficient use of electric power in telecom and Ethernet systems. We use metamorphic growth technology to increase the flexibility when choosing materials with lattice constants different from that of InP with the aim of realizing improved carrier confinement under high temperature. In this report, we demonstrated a 20 Gbit/s direct modulation with clear eye opening at the temperature between 25 and 85℃. In addition, to increase the temperature characteristics, we introduced electron stopper layer in p-cladding. This laser exhibits a 1.3-µm-range operation with high characteristic temperature (T0 = 220 K) and high operating temperature (200°C). These results show that a laser with a metamorphic buffer on a GaAs substrate is a good candidate as an uncooled light source with a low power consumption.
Keyword (in Japanese) (See Japanese page) 
(in English) Semiconductor laser / Temperature characteristics / Metamorphic / / / / /  
Reference Info. IEICE Tech. Rep., vol. 112, no. 99, LQE2012-15, pp. 9-12, June 2012.
Paper # LQE2012-15 
Date of Issue 2012-06-15 (OPE, LQE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF OPE2012-11 LQE2012-15

Conference Information
Committee OPE LQE EMD CPM OME  
Conference Date 2012-06-22 - 2012-06-22 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To LQE 
Conference Code 2012-06-OPE-LQE 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Demonstration on 20 Gbit/s Direct Modulation of 1.3-µm-Range Metamorphic Laser 
Sub Title (in English)  
Keyword(1) Semiconductor laser  
Keyword(2) Temperature characteristics  
Keyword(3) Metamorphic  
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1st Author's Name Masakazu Arai  
1st Author's Affiliation NTT Corporation (NTT)
2nd Author's Name Shigeru Kanazawa  
2nd Author's Affiliation NTT Corporation (NTT)
3rd Author's Name Takashi Tadokoro  
3rd Author's Affiliation NTT Corporation (NTT)
4th Author's Name Masaki Kohtoku  
4th Author's Affiliation NTT Corporation (NTT)
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Speaker Author-1 
Date Time 2012-06-22 10:30:00 
Presentation Time 25 minutes 
Registration for LQE 
Paper # OPE2012-11, LQE2012-15 
Volume (vol) vol.112 
Number (no) no.98(OPE), no.99(LQE) 
Page pp.9-12 
#Pages 4 
Date of Issue 2012-06-15 (OPE, LQE) 

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