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Paper Abstract and Keywords
Presentation 2012-06-22 11:20
GHz response of a Si photodiode fabricated by 0.35um BiCMOS process
Kazuaki Maekita, Toshiyuki Shimotori, Takeo Maruyama, Koichi Iiyama (Kanazawa Univ.) OPE2012-13 LQE2012-17
Abstract (in Japanese) (See Japanese page) 
(in English) We fabricated silicon photodiode with standard 0.35um bipolar complementary metal-oxide-semiconductor process for optical interconnect applications. The devices were measured at 650 nm wavelength. The dark current of 2.6 nA and the breakdown voltage of 13 V were obtained. The avaranche breakdown occurred at bias voltage of 13 V. The maximum sensitivity was 2.77 A/W at the bias voltage of 13.7 V (the avaranche gain of 25). The 3-dB bandwidth of 1 GHz was obtained at the bias voltage of 13.3 V.
Keyword (in Japanese) (See Japanese page) 
(in English) Si / BiCMOS / Photodiode / OEICs / High frequency response / / /  
Reference Info. IEICE Tech. Rep., vol. 112, no. 99, LQE2012-17, pp. 17-20, June 2012.
Paper # LQE2012-17 
Date of Issue 2012-06-15 (OPE, LQE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF OPE2012-13 LQE2012-17

Conference Information
Committee OPE LQE EMD CPM OME  
Conference Date 2012-06-22 - 2012-06-22 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To LQE 
Conference Code 2012-06-OPE-LQE 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) GHz response of a Si photodiode fabricated by 0.35um BiCMOS process 
Sub Title (in English)  
Keyword(1) Si  
Keyword(2) BiCMOS  
Keyword(3) Photodiode  
Keyword(4) OEICs  
Keyword(5) High frequency response  
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1st Author's Name Kazuaki Maekita  
1st Author's Affiliation Kanazawa University (Kanazawa Univ.)
2nd Author's Name Toshiyuki Shimotori  
2nd Author's Affiliation Kanazawa University (Kanazawa Univ.)
3rd Author's Name Takeo Maruyama  
3rd Author's Affiliation Kanazawa University (Kanazawa Univ.)
4th Author's Name Koichi Iiyama  
4th Author's Affiliation Kanazawa University (Kanazawa Univ.)
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Speaker Author-1 
Date Time 2012-06-22 11:20:00 
Presentation Time 25 minutes 
Registration for LQE 
Paper # OPE2012-13, LQE2012-17 
Volume (vol) vol.112 
Number (no) no.98(OPE), no.99(LQE) 
Page pp.17-20 
#Pages 4 
Date of Issue 2012-06-15 (OPE, LQE) 

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