In this paper, a novel pnp bipolar junction transistor (BJT) structure based on CMOS technology is proposed to improve the matching characteristics of the BJT. Although the electrical characteristics of the collector current density Jc and the current gain beta of the proposed structure are similar to those of the conventional structure, the matching characteristics of the collector current density and the current gain for the proposed structure are better than those for the conventional structure. Therefore, the proposed BJT structure is desirable for analog digital mixed signal application.
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In this paper, a novel pnp bipolar junction transistor (BJT) structure based on CMOS technology is proposed to improve the matching characteristics of the BJT. Although the electrical characteristics of the collector current density Jc and the current gain beta of the proposed structure are similar to those of the conventional structure, the matching characteristics of the collector current density and the current gain for the proposed structure are better than those for the conventional structure. Therefore, the proposed BJT structure is desirable for analog digital mixed signal application.