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電子デバイス研究会(ED)
[schedule]
[select]
専門委員長
加地 徹 (豊田中研)
副委員長
原 直紀 (富士通研)
幹事
須原 理彦 (首都大東京), 上田 哲三 (パナソニック)
幹事補佐
葛西 誠也 (北大), 松永 高治 (NEC)
シリコン材料・デバイス研究会(SDM)
[schedule]
[select]
専門委員長
奈良 安雄 (富士通セミコンダクター)
副委員長
大野 裕三 (筑波大)
幹事
野村 晋太郎 (筑波大), 笹子 佳孝 (日立)
日時
2012年 6月27日(水) 08:40 - 19:00
2012年 6月28日(木) 08:30 - 12:00
2012年 6月29日(金) 08:15 - 12:40
議題
2012 先端半導体デバイスの基礎と応用に関するアジア太平洋ワークショップ
会場名
沖縄県青年会館
住所
〒900-0033 沖縄県那覇市久米2-15-23
交通案内
モノレール 旭橋駅下車 徒歩5分
http://www.okiseikan.or.jp/new/news.php
会場世話人
連絡先
琉球大学 野口 隆
098-864-1780
他の共催
◆IEEK共催
6月27日(水) 午前 Opening Session
08:40 - 08:50
08:40-08:50
Opening Address ( 10分 )
6月27日(水) 午前 Plenary Session
08:50 - 10:50
(1)
08:50-09:30
[基調講演]
TCAD challenges and opportunities for predictive development
Yongwoo Kwon
・○
Dae Sin Kim
・
Young-Kwan Park
(
Samsung Electronics
)
(2)
09:30-10:10
[基調講演]
More-than-Moore Devices based on Advanced CMOS Technologies
○
Hitoshi Wakabayashi
(
Sony
)
(3)
10:10-10:50
[基調講演]
GaNパワーデバイスの最新技術
○
上田大助
(
パナソニック
)
11:00-11:10
Short Break ( 10分 )
6月27日(水) 午前 Si-based Power Device Technology
11:00 - 12:00
(4)
11:00-11:15
Electrical characteristics of IGBT using a field stop trench gate structure
○
Ey Goo Kang
(
Far East Univ.
)・
Eun Sik Jung
(
Maplesemiconductor Incorporated
)・
Yong Tae Kim
(
KIST
)
(5)
11:15-11:30
Optimization and characterization of 600V super junction power MOSFET using a deep trench structure
○
Yong Tae Kim
(
KIST
)・
Eun Sik Jung
(
Maplesemiconductor Inc.
)・
Ey Goo Kang
(
Far East Univ.
)
(6)
11:30-12:00
[招待講演]
Gate Stack Technologies for Silicon Carbide Power MOS Devices
○
Takuji Hosoi
・
Takashi Kirino
・
Yusuke Uenishi
・
Daisuke Ikeguchi
・
Atthawut Chanthaphan
(
Osaka Univ.
)・
Akitaka Yoshigoe
・
Yuden Teraoka
(
JAEA
)・
Shuhei Mitani
・
Yuki Nakano
・
Takashi Nakamura
(
ROHM
)・
Takayoshi Shimura
・
Heiji Watanabe
(
Osaka Univ.
)
6月27日(水) 午前 Detectors and Sensors
11:00 - 12:15
(7)
11:00-11:30
[招待講演]
III-nitride-based Visible-blind and Solar-blind Photodetectors
○
Hai Lu
・
Rong Zhang
・
Youdou Zheng
(
School of ESE, Nanjing Univ.
)
(8)
11:30-11:45
The Very Fast Transferred Pixel with a Multi-Pinchoff Photodiode for Wafer-Scale X-Ray Sensor
○
Joonghyeok Byeon
・
Jongmin Kim
・
Won-Young Jung
(
Dongbu Hitek
)・
Ji-Hoon Lim
・
Jae-Kyung Wee
(
Soongsil Univ.
)
(9)
11:45-12:15
[招待講演]
Plasmonic Terahertz Wave Detectors Based on Silicon Field-Effect Transistors
○
Kyung Rok Kim
・
Min Woo Ryu
・
Sunhae Shin
・
Hee Cheol Hwang
・
Kibog Park
(
UNIST
)
12:15-13:15
Lunch Break ( 60分 )
6月27日(水) 午後 MOSFETs and Memory Technology
13:15 - 15:00
(10)
13:15-13:30
Investigation and Optimization of the n-channel and p-channel L-shaped Tunneling Field-Effect Transistors
○
Sang Wan Kim
(
Seoul National Univ.
)・
Woo Young Choi
(
Sogang Univ.
)・
Min-Chul Sun
・
Hyun Woo Kim
・
Byung-Gook Park
(
Seoul National Univ.
)
(11)
13:30-13:45
The Asymmetric I-V Characteristics of Vertical MOSFET Induced by Tapered Silicon Pillar
○
Takuya Imamoto
・
Tetsuo Endoh
(
Tohoku Univ.
)
(12)
13:45-14:00
A High Performance SRAM Sense Amplifier with Vertical MOSFET
○
Hyoungjun Na
・
Tetsuo Endoh
(
Tohoku Univ.
)
(13)
14:00-14:15
Effects of Random Dopant Fluctuations on NAND Flash Memory Cells
Jungeun Kang
・○
Boram Han
(
Sogang Univ.
)・
Kyoung-Rok Han
・
Chung sung Jae
・
Gyu-Seog Cho
・
Sung-Kye Park
・
Seok-Kiu Lee
(
SK Hynix
)・
Woo Young Choi
(
Sogang Univ.
)
(14)
14:15-14:30
Control Effect of New Optimized Structure of Planar Thin Floating Gate (FG) NAND Flash to Fringing Field
○
Do-Bin Kim
・
Yoon Kim
・
Se Hwan Park
・
Wandong Kim
・
Joo Yun Seo
・
Seung-Hyun Kim
・
Byung-Gook Park
(
Seoul National Univ.
)
(15)
14:30-14:45
A Novel CMOS-Based PNP BJT Structure for Analog Applications
○
Seon-Man Hwang
・
Yi-Jung Jung
・
Hyuk-Min Kwon
・
Jae-Hyung Jang
・
Ho-Young Kwak
・
Sung-Kyu Kwon
(
Chungnam National Univ.
)・
Yi-Sun Chung
・
Da-Soon Lee
・
Jong-Kon Lee
(
Magnachip Semiconductor Inc.
)・
Hi-Deok Lee
(
Chungnam National Univ.
)
(16)
14:45-15:00
100nm-gate-length Normally-off Accumulation-Mode FD-SOI MOSFETs for Low Noise Analog/RF Circuits
○
Hidetoshi Utsumi
・
Ryohei Kasahara
・
Yukihisa Nakao
・
Rihito Kuroda
・
Akinobu Teramoto
・
Shigetoshi Sugawa
・
Tadahiro Ohmi
(
Tohoku Univ.
)
15:00-15:15
Break ( 15分 )
6月27日(水) 午後 TFT Technology I
15:15 - 16:45
(17)
15:15-15:30
Field-induced degradation of organic field effect transistors under vacuum condition
Hoonsang Yoon
・○
Youngjin Kang
・
Jongsun Choi
・
Hyungtak Kim
(
Hongik Univ.
)
(18)
15:30-15:45
Nonvolatile Memory Thin-Film Transistors Using Solution-Processed Oxide Semiconducting Channel and Ferroelectric Polymer Gate Insulator
Jun-Yong Bak
(
Kyung Hee Univ.
)・
Soon-Won Jung
・
Ho-Jun Ryu
・
Sang-Hee Ko Park
・
Chi-Sun Hwang
(
ETRI
)・○
Sung-Min Yoon
(
Kyung Hee Univ.
)
(19)
15:45-16:00
Influence of co-sputtered HfO2-Ti gate dielectric in IZO-based Transparent thin film transistors
○
Jungil Yang
・
Donghee Lee
・
Dongkyu Cho
・
Sanghyun Woo
・
Yoosung Lim
・
Sungmin Park
・
Daekuk Kim
・
Moonsuk Yi
(
PNU.
)
(20)
16:00-16:15
A New RSD Bottom Gate Poly-Si Thin Film Transistor With Inside Spacer
○
Yi-Hsiang Chiu
・
Shan-Jen Yang
・
Feng-Tso Chien
(
Feng Chia Univ.
)・
Chii-Wen Chen
(
Minghsin Univ.
)
(21)
16:15-16:30
The study on A Novel Asymmetric Poly-Si Thin Film Transistor With Low Drain Electric Field
○
Meng-Shan Chi
・
Tzung-Ju Lin
・
Feng-Tso Chien
(
Feng Chia Univ.
)・
Chii-Wen Chen
(
Minghsin Univ.
)
(22)
16:30-16:45
Influence of grain size deviation on device characteristics of TFTs and displays for OLED driving
○
Katsuya Shirai
・
Takashi Noguchi
(
Univ. of the Ryukyus
)
16:45-17:15
Break ( 30分 )
6月27日(水) 午後 TFT Technology II
17:15 - 18:45
(23)
17:15-17:30
Crystallization of a-Si Films with Smooth Surface Using Blue-Multi-Laser-Diode-Annealing
○
Tatsuya Okada
・
Jean de Dieu Mugiraneza
・
Katsuya Shirai
・
Takuma Nishinohara
・
Tomoyuki Mukae
・
Keisuke Yagi
・
Takashi Noguchi
(
Univ. Ryukyus
)
(24)
17:30-17:45
Characterization of Optimized Sputtered Poly-Si Films by Blue-Multi-Laser-Diode Annealing for High Performance Displays
○
Takuma Nishinohara
・
J. D. Mugiraneza
・
Katsuya Shirai
・
Tatsuya Okada
・
Takashi Noguchi
(
Univ. of the Ryukyus
)
(25)
17:45-18:00
Effective Annealing of Si Films as an advanced LTPS
○
Takashi Noguchi
・
Takuma Nishinohara
・
Jean de Dieu Mugiraneza
・
Katsuya Shirai
・
Tatsuya Okada
(
Univ. Ryukyus
)
(26)
18:00-18:15
Improvement of Low-Temperature-Deposited SiO2 and Si/SiO2 interface Properties by Thermal-Plasma-Jet Annealing and Heat Treatment in High-Pressure H2O Vapor
○
Shunki Koyanagi
・
Shohei Hayashi
・
Tsubasa Mizuno
・
Kouhei Sakaike
・
Hiroaki Hanafusa
・
Seiichiro Higashi
(
Hiroshima Univ.
)
(27)
18:15-18:30
Multi-Layered SiGe-on-Insulator Structures by Rapid-Melting-Growth
○
Yuki Tojo
・
Ryo Matsumura
・
Hiroyuki Yokoyama
・
Masashi Kurosawa
・
Kaoru Toko
・
Taizoh Sadoh
・
Masanobu Miyao
(
Kyushu Univ.
)
(28)
18:30-18:45
Formation of (111)-oriented large-grain Ge crystal on insulator at low-temperature by gold-induced crystallization technique
○
Jonghyeok Park
・
Tsuneharu Suzuki
・
Masanobu Miyao
・
Taizoh Sadoh
(
Kyushu Univ.
)
6月27日(水) 午後 Interconnects and Integration Technologies
13:15 - 15:00
(29)
13:15-13:30
Loss characteristic of Comb-type Capacitive Transmission Line on MMIC
○
Eui-Hoon Jang
・
Jang-Hyeon Jeong
・
Sung-Jo Han
・
Ki-Jun Son
・
Young Yun
(
Korea Maritime Univ.
)
(30)
13:30-13:45
Loss characteristic of Coplanar Waveguide Employing Periodic Structure on RFIC
○
Jang-Hyeon Jeong
・
Eui-Hoon Jang
・
Sung-Jo Han
・
Ki-Jun Son
・
Young Yun
(
Korea Maritime Univ.
)
(31)
13:45-14:00
A Simple Dual-Loop Optoelectronic Oscillator with Reduced Spurious Tones Using a Multi-Electrode Semiconductor Laser
○
Jun-Hyung Cho
・
Seo-Weon Heo
・
Hyuk-Kee Sung
(
Hongik Univ.
)
(32)
14:00-14:15
A chip scale wafer level packaging for LED using surface aligning technique.
○
Jin Kwan Kim
・
Hee Chul Lee
(
KAIST
)
(33)
14:15-14:30
Stress Measurement Errors induced by the Strain Effects in Resistor-based Stress Sensors on (111) silicon
○
Chun-Hyung Cho
・
Ho-Young Cha
(
Hongik Univ.
)
(34)
14:30-14:45
Comparison of thin film properties of WN diffusion barrier prepared by atomic layer deposition using metal organic and metal halide reactant gases
○
Yeong Hyeon Hwang
(
KIST
)・
Won-Ju Cho
(
Kwangwoon Univ.
)・
Yong Tae Kim
(
KIST
)
(35)
14:45-15:00
Fabrication of β-FeSi2 thin films on Si using solid-phase growth reaction from Fe and FeSi sources
○
Katsuaki Momiyama
・
Kensaku Kanomata
・
Takahiko Suzuki
・
Shigeru Kubota
・
Fumihiko Hirose
(
Yamagata Univ.
)
15:00-15:15
Break ( 15分 )
6月27日(水) 午後 Circuit Technology I
15:15 - 17:00
(36)
15:15-15:45
[招待講演]
CIS in high-end mobile camera
○
Kangbong Seo
・
Kyoungin Lee
・
Siwook Yoo
・
Sangdong Yoo
・
Kyoungdong Yoo
(
SK Hynix
)
(37)
15:45-16:15
[招待講演]
Nonlinear Three Branch Nano-Junction Devices and Their Application to Logic Circuits
○
Seiya Kasai
(
Hokkaido Univ.
)・
Shaharin Fadzli Abd Rahman
(
UTM/Hokkaido Univ.
)・
Masaki Sato
・
Xiang Yin
(
Hokkaido Univ.
)・
Toshihiko Maemoto
(
Osaka Inst. Tech.
)
(38)
16:15-16:30
A 140-GHz Fully Differential Common-Source Amplifier in 65nm CMOS
○
Hyunchul Kim
・
Daekeun Yoon
・
Jae-Sung Rieh
(
Korea Univ.
)
(39)
16:30-16:45
An Area-Efficient CMOS Delay-Locked Loop
○
Sungkeun Lee
・
Se-Weon Heo
・
Jongsun Kim
(
Hongik Univ.
)
(40)
16:45-17:00
A Wide Range and High Resolution CMOS DCC
○
Sangwoo Han
・
Jongsun Kim
(
Hongik Univ.
)
17:00-17:15
Break ( 15分 )
6月27日(水) 午後 Circuit Technology II
17:15 - 19:00
(41)
17:15-17:30
A 0.5-V 2.4-GHz CMOS Voltage-Controlled Oscillator for Wireless Sensor Network Application
○
Seunghyeon Kim
・
Hyunchol Shin
(
Kwangwoon Univ.
)
(42)
17:30-17:45
A 2.4-GHz CMOS Single-Chip OOK Transceiver for Wireless Sensor Network Applications
○
Seunghyeon Kim
・
Hyun Kim
・
Hyunchol Shin
(
Kwangwoon Univ.
)
(43)
17:45-18:00
The Robust Cgd/Cgs Measurement Method of 85V nLDMOS
○
Won-Young Jung
・
Jin-Soo Kim
・
Taek-Soo Kim
(
Dongbu Hitek
)
(44)
18:00-18:15
Design of Small-Area and High-Reliability 512-Bit EEPROM IP and its Measurement
○
Liyan Jin
・
Geon-Soo Yonn
・
Dong-Hoon Lee
・
Ji-Hye Jang
・
Mu-Hun Park
・
Pan-Bong Ha
・
Young-Hee Kim
(
Changwon National Univ.
)
(45)
18:15-18:30
Design of a Differential Paired eFuse One-Time Programmable Memory IP and its Measurement
○
Huiling Yang
・
Min-Sung Kim
・
Ji-Hye Jang
・
Mu-hun Park
・
Pan-Bong Ha
・
Young-Hee Kim
(
Changwon National Univ.
)
(46)
18:30-18:45
A Design of 5 - 6 GHz Band Rat-Race Hybrid Ring Coupler with Improved Phase-Error for Microstrip Structure
○
Kyunghoon Kim
・
Dohyung Kim
・
Junghyun Shin
・
Jinwook Burm
(
Sogang Univ.
)
(47)
18:45-19:00
A Power-Efficient 4-PAM Serial Link Receiver using a fully differential Rail-to-Rail input Dynamic Latch for Wide Dynamic Range
○
Junan Lee
・
Daeho Yun
・
Bongsub Song
・
Jinwook Burm
(
Sognag Univ.
)
6月28日(木) 午前 Memory Technology
08:30 - 10:40
(48)
08:30-08:45
Modeling of Triangular Sacrificial Layer Residue Effect in Nano-Electro-Mechanical Nonvolatile Memory
○
Min Su Han
・
Yeong Hwan Kim
・
Kyung Soo Kim
・
Jae Min Lee
・
Youngcheol Oh
・
Woo Young Choi
(
Myongji Univ.
)・
Woo Young Choi
(
Sogang Univ.
)・
Il Hwan Cho
(
Myongji Univ.
)
(49)
08:45-09:00
Evaluation of Chemical Composition and Bonding Features of Pt/SiOx/Pt MIM Diodes and Its Impact on Resistance Switching Behavior
○
Akio Ohta
(
Hiroshima Univ.
)・
Katsunori Makihara
(
Nagoya Univ.
)・
Mitsuhisa Ikeda
・
Hideki Murakami
・
Seiichiro Higashi
(
Hiroshima Univ.
)・
Seiichi Miyazaki
(
Nagoya Univ.
)
(50)
09:00-09:15
Characterization of Resistive Switching of Pt/Si-rich Oxide/TiN System
○
Motoki Fukusima
(
Nagoya Univ.
)・
Akio Ohta
(
Hiroshima Univ.
)・
Katsunori Makihara
・
Seiichi Miyazaki
(
Nagoya Univ.
)
(51)
09:15-09:30
Nonvolatile Polymer Memory-cell embedded with Ni Nanocrystals Surrounded by NiO in Polystyrene
○
Jong-Dae Lee
・
HyunMin Seung
・
Chang-Hwan Kim
・
Jea-Gun Park
(
Hanyang Uni.
)
(52)
09:30-09:45
Characterization of Local Electronic Transport through Ultrathin Au/Highly-dense Si Nanocolumar structures by Conducting-Probe Atomic Force Microscopy
○
Daichi Takeuchi
・
Katsunori Makihara
(
Nagoya Univ.
)・
Mitsuhisa Ikeda
(
Hiroshima Univ.
)・
Seiichi Miyazaki
(
Nagoya Univ.
)・
Hirokazu Kaki
・
Tsukasa Hayashi
(
NISSIN ELECTRIC Co. Ltd.,
)
(53)
09:45-10:00
Photoexcited Carrier Transfer in NiSi-Nanodots/Si-Quantum-Dots Hybrid Floating Gate in MOS Structures
○
Mitsuhisa Ikeda
(
Hiroshima Univ.
)・
Katsunori Makihara
・
Seiichi Miyazaki
(
Nagoya Univ.
)
10:00-10:40
Break ( 40分 )
6月28日(木) 午前 Energy Harvesting
08:30 - 09:45
(54)
08:30-09:00
[招待講演]
Voltage Multiplier Circuits and Radio Wave Generation Module for Energy Harvesting System
Saejeong Choi
・
Changsun Kim
・
Hyunshin Lee
・
Inyoung Kim
・
Dongchul Park
(
MJU
)・
Sooyoung Min
・
Yunsik Lee
(
KETI
)・○
Taikyeong Jeong
(
MJU
)
(55)
09:00-09:30
[招待講演]
Exploitation of Hierarchical Nanomaterials for Improving Light-Harvesting and Charge Collecting Properties of Dye-sensitized Solar Cells
○
Hyun Suk Jung
(
SKKU
)
(56)
09:30-09:45
Lead Zirconate Titanate Acoustic Energy Harvesters for use in high sound pressure environments
○
Tomohiro Matsuda
・
Saori Hagiwara
・
Shuntaro Miyake
・
Kazuki Tomii
・
Satoshi Iizumi
・
Shungo Tomioka
・
Shu Kimura
・
Kyohei Tsujimoto
・
Yusuke Uchida
・
Yasushiro Nishioka
(
Nihon Univ.
)
6月28日(木) 午前 Gate Stack Technology
09:45 - 10:30
(57)
09:45-10:00
Control of Interfacial Reaction of HfO2/Ge Structure by Insertion of Ta Oxide Layer
○
Kuniaki Hashimoto
・
Akio Ohta
・
Hideki Murakami
・
Seiichiro Higashi
(
Hiroshima Univ.
)・
Seiichi Miyazaki
(
Nagoya Univ.
)
(58)
10:00-10:15
Effects of Light and Air Exposures on Electrical Properties of GeO2/Ge and Al2O3/Ge Gate Stack Structures
○
Kusumandari
・
Wakana Takeuchi
・
Kimihiko Kato
・
Shigehisa Shibayama
・
Mitsuo Sakashita
・
Noriyuki Taoka
・
Osamu Nakatsuka
・
Shigeaki Zaima
(
Nagoya Univ.
)
(59)
10:15-10:30
Effect of Si surface roughness on EOT reduction for HfON gate insulator formed by ECR plasma oxidation of HfN
○
Dae-Hee Han
・
Shun-ichiro Ohmi
(
Tokyo Tech
)
10:30-10:40
Short Break ( 10分 )
10:40-12:00
Poster session ( 80分 )
12:00-13:00
Lunch Break ( 60分 )
13:00-18:00
Excursion ( 300分 )
18:00-20:00
Banquet ( 120分 )
6月29日(金) 午前 Advanced Si Technology
08:15 - 10:30
(60)
08:15-08:45
[招待講演]
The Stability of Bandgap Reference Voltage with Device Structures
○
Sang-Gi Lee
・
Jun-Woo Song
・
Eun-Sang Jo
・
Kwang-Dong Yoo
(
Dongbu HiTek
)
(61)
08:45-09:15
[招待講演]
Potential of GeSn Alloys for Application to Si Nanoelectronics
○
Shigeaki Zaima
・
Yosuke Shimura
・
Marika Nakamura
・
Wakana Takeuchi
・
Mitsuo Sakashita
・
Osamu Nakatsuka
(
Nagoya Univ.
)
(62)
09:15-09:45
[招待講演]
III-V/Ge integration on Si platform for electronic-photonic integrated circuits
○
Mitsuru Takenaka
・
Shinichi Takagi
(
Univ. Tokyo
)
(63)
09:45-10:15
[招待講演]
超低電力応用に向けた薄膜BOX-SOI (SOTB) CMOS技術
○
杉井信之
・
岩松俊明
・
山本芳樹
・
槇山秀樹
・
角村貴昭
・
篠原博文
・
青野英樹
・
尾田秀一
・
蒲原史朗
・
山口泰男
(
超低電圧デバイス技研組合/ルネサス エレクトロニクス
)・
水谷朋子
・
平本俊郎
(
東大
)
(64)
10:15-10:30
Novel Tunneling Field-Effect Transistor with Sigma-shape Embedded SiGe Sources and Recessed Channel
Min-Chul Sun
(
SNU and SEC
)・○
Sang Wan Kim
・
Garam Kim
・
Hyun Woo Kim
・
Hyungjin Kim
・
Jong-Ho Lee
・
Hyungcheol Shin
・
Byung-Gook Park
(
SNU
)
10:30-10:45
Break ( 15分 )
6月29日(金) 午前 MOSFET Reliability
10:45 - 12:30
(65)
10:45-11:15
[招待講演]
Decomposition analysis of on-current variability of FinFETs
○
Takashi Matsukawa
・
Yongxun Liu
・
Kazuhiko Endo
・
Shinichi O'uchi
・
Meishoku Masahara
(
AIST
)
(66)
11:15-11:45
[招待講演]
Thermal-Aware Device Desing of Nanoscale MOS Transistors
○
Ken Uchida
(
Keio Univ.
)・
Tsunaki Takahashi
・
Nobuyasu Beppu
(
Tokyo Tech
)
(67)
11:45-12:00
Statistical Analysis of Current Onset Voltage (COV) Distribution of Scaled MOSFETs
○
Tomoko Mizutani
・
Anil Kumar
・
Toshiro Hiramoto
(
Univ. of Tokyo
)
(68)
12:00-12:15
Reliability Measurement of PFETs under Post Fabrication Self-Improvement Scheme for SRAM
○
Nurul Ezaila Alias
・
Anil Kumar
・
Takuya Saraya
(
Univ. of Tokyo
)・
Shinji Miyano
(
STARC
)・
Toshiro Hiramoto
(
Univ. of Tokyo
)
(69)
12:15-12:30
The Effects of Fluorine Implantation on 1/f noise and reliability characteristics of NMOSFET
○
Jae-Hyung Jang
・
Hyuk-Min Kwon
・
Ho-Young Kwak
・
Sung-Kyu Kwon
・
Seon-Man Hwang
・
Jong-Kwan Shin
(
Chungnam National Univ.
)・
Seung-Yong Sung
・
Yi-Sun Chung
・
Da-Soon Lee
・
Jong-Kon Lee
(
Magnachip Semiconductor Inc
)・
Hi-Deok Lee
(
Chungnam National Univ.
)
6月29日(金) 午前 Widegap and III-V Semiconductor Devices
08:15 - 10:30
(70)
08:15-08:45
[招待講演]
Integrated Design Platform for Power Electronics Applications with GaN Devices
○
Kenji Mizutani
・
Hiroaki Ueno
・
Yuji Kudoh
・
Shuichi Nagai
・
Kaoru Inoue
・
Nobuyuki Otsuka
・
Tetsuzo Ueda
・
Tsuyoshi Tanaka
・
Daisuke Ueda
(
Panasonic
)
(71)
08:45-09:15
[招待講演]
Current Status of GaN Technologies in ETRI
○
Jae Kyoung Mun
・
Jong-Won Lim
・
Sang Choon Ko
・
Seong-il Kim
・
Eun Soo Nam
(
ETRI
)
(72)
09:15-09:45
[招待講演]
New widegap semiconductor Ga2O3 MESFETs and Schottky barrier diodes
○
Masataka Higashiwaki
(
NICT/JST
)・
Kohei Sasaki
(
Tamura Corp./NICT
)・
Akito Kuramata
(
Tamura Corp.
)・
Takekazu Masui
(
Koha Co., Ltd.
)・
Shigenobu Yamakoshi
(
Tamura Corp.
)
(73)
09:45-10:15
[招待講演]
InAs Quantum-Well MOSFET (Lg = 100 nm) for Logic and Microwave Applications
○
Tae-Woo Kim
・
Richard Hill
(
SEMATECH
)・
Dae-Hyun Kim
(
Teledyne
)・
Jesus A. del Alamo
(
MIT
)・
Chad D. Young
・
Dmitry Veksler
・
Chang Yong Kang
(
SEMATECH
)・
Jungwoo Oh
(
Yonsei Univ.
)・
Chris Hobbs
・
Paul D. Kirsch
・
Raj Jammy
(
SEMATECH
)
(74)
10:15-10:30
Vertical InGaAs MOSFET with HfO2 gate
Jun Hirai
・
Tomoki Kususaki
・
Shunsuke Ikeda
・○
Yasuyuki Miyamoto
(
Tokyo Tech
)
10:30-10:45
Break ( 15分 )
6月29日(金) 午前 Widegap and Nanowire Devices
10:45 - 12:15
(75)
10:45-11:00
ICPCVD SiO2 for AlGaN/GaN MISHFET application
○
Bong-Ryeol Park
・
Jae-Gil Lee
・
Hyungtak Kim
・
Chun-Hyung Cho
・
Ho-Young Cha
(
Hongik Univ.
)
(76)
11:00-11:15
Improved current stability in multi-mesa-channel AlGaN/GaN HEMTs
○
Kota Ohi
・
Tamotsu Hashizume
(
Hokkaido Univ.
)
(77)
11:15-11:30
Fabrication and Characterization of Asymmetric-Gate GaAs Nanowire Transistors for Electrical Brownian Ratchet
○
Takayuki Tanaka
・
Yuki Nakano
・
Toru Muramatsu
・
Seiya Kasai
(
Hokkaido Univ.
)
(78)
11:30-12:00
[招待講演]
Carbon nanotube-based plastic electronics
○
Yutaka Ohno
(
Nagoya Univ., Aalto Univ.
)・
Dong-ming Sun
・
Kentaro Higuchi
(
Nagoya Univ.
)・
Marina Y. Timmermans
・
Antti Kaskela
・
Albert G. Nasibulin
(
Aalto Univ.
)・
Shigeru Kishimoto
(
Nagoya Univ.
)・
Esko I. Kauppinen
(
Aalto Univ.
)・
Takashi Mizutani
(
Nagoya Univ.
)
(79)
12:00-12:15
Solution-based high-frequency field-effect transistors with purified semiconductor carbon nanotubes
○
Masaki Inagaki
・
Kensuke Hata
・
Kazunari Shiozawa
・
Yasumitsu Miyata
・
Yutaka Ohno
・
Shigeru Kishimoto
・
Hisanori Shinohara
・
Takashi Mizutani
(
Nagoya Univ.
)
12:15-12:30
Break ( 15分 )
6月29日(金) 午後 Closing session
12:30 - 12:40
12:30-12:40
Closing Remarks ( 10分 )
6月28日(木) 午前 Poster Session
10:40 - 12:00
(80)
10:40-12:00
[ポスター講演]
Rigorous Design for Gate-Dielectric and n-Pocket Region of Tunneling Field-Effect Transistors and Its High Performances.
○
Jae Hwa Seo
・
Jae Sung Lee
・
Yun Soo Park
・
Jung-Hee Lee
・
In Man Kang
(
Kyunpook Nat'l Univ.
)
(81)
10:40-12:00
[ポスター講演]
Dependence of Schottky barrier height on the junction size of bcc-metal/n-Ge(111) contacts
○
Hirotaka Yoshioka
・
Kenji Kasahara
・
Toshihiro Nishimura
・
Shinya Yamada
・
Masanobu Miyao
・
Kohei Hamaya
(
Kyushu Univ.
)
(82)
10:40-12:00
[ポスター講演]
Effect of hydrofluoric acid treatment on InAlN surfaces
○
Takuma Nakano
・
Masamichi Akazawa
(
Hokkaido Univ.
)
(83)
10:40-10:55
[ポスター講演]
The surface morphology and electrical properties of NiO with various RF power and O2/(Ar+O2) gas mixture
○
Jonghun Kim
・
Gyohun Koo
・
Changju Lee
・
Sungho Hahm
(
Kyungpook National Univ.
)・
Youngchul Jung
(
Gyeongju Univ.
)・
Yougsoo Lee
(
Kyungpook National Univ.
)
(84)
10:40-12:00
[ポスター講演]
Mold transfer processed organic light emitting diodes using patterned conductive polymer electrode
○
Hyun Jun Lee
・
Young Wook Park
・
Tae Hyun Park
・
Eun Ho Song
(
Korea Univ.
)・
Se Joong Shin
(
Korea univ.
)・
Hakkoo Kim
・
Kyung bok Choi
・
Ju Hyun Hwang
(
Korea Univ.
)・
Jinwoo Lee
(
Micobiomed. Ltd
)・
Jinnil Choi
(
Hanbat National Univ.
)・
Byeong-Kwon Ju
(
Korea Univ.
)
(85)
10:40-12:00
[ポスター講演]
Development of scanning nano-SQUIDs for local magnetic imaging.
○
Yusuke Shibata
(
Tsukuba Univ.
)・
Ryosuke Ishiguro
(
Tokyo Univ. of Science
)・
Hiromi Kashiwaya
・
Satoshi Kashiwaya
(
AIST
)・
Hideaki Takayanagi
(
Tokyo Univ. of Science/NIMS
)・
Shintaro Nomura
(
Tsukuba Univ.
)
(86)
10:40-12:00
[ポスター講演]
Degradation Characteristics of high voltage AlGaN/GaN-on-Si Heterostructure FETs
Shinhyuk Choi
・○
Hoonsang Yoon
・
Dongmin Keum
・
Jae-Gil Lee
・
Ho-Young Cha
・
Hyungtak Kim
(
Hongik Univ.
)
講演時間
基調講演
発表 30 分 + 質疑応答 10 分
招待講演
発表 20 分 + 質疑応答 10 分
一般講演
発表 10 分 + 質疑応答 5 分
ポスター講演
発表 80 分
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小野 行徳(NTT)
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富山市五福3190
富山大学大学院理工学研究部
ナノ・新機能材料学域 ナノマテリアル・システムデザイン学系
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