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Paper Abstract and Keywords
Presentation 2012-06-27 11:15
Optimization and characterization of 600V super junction power MOSFET using a deep trench structure
Yong Tae Kim (KIST), Eun Sik Jung (Maplesemiconductor Inc.), Ey Goo Kang (Far East Univ.)
Abstract (in Japanese) (See Japanese page) 
(in English) Recently, Power MOSFET has been intensively investigated as voltage-driven devices for the applications of large power switching devices, converter, and motor control. But, a main drawback is that the on-resistance is proportionally increased with higher breakdown voltage spikes. In this work, we have designed deep trench structure and optimized design parameters of 600V super junction Power MOSFET. Comparison of the relationship between breakdown voltage and on-resistance characteristics indicates that the super junction structure provides relatively higher breakdown voltage than the conventional planar type and the on-resistance of super junction Power MOSFET can be reduced by 40 % comparing that of the Planar MOSFET at the same cell pitch and breakdown voltage.
Keyword (in Japanese) (See Japanese page) 
(in English) Super junction / Power MOSFET / Deep trench / On-resistance / Optimization / / /  
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Conference Information
Committee SDM ED  
Conference Date 2012-06-27 - 2012-06-29 
Place (in Japanese) (See Japanese page) 
Place (in English) Okinawa Seinen-kaikan 
Topics (in Japanese) (See Japanese page) 
Topics (in English) 2012 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices 
Paper Information
Registration To SDM 
Conference Code 2012-06-SDM-ED 
Language English 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Optimization and characterization of 600V super junction power MOSFET using a deep trench structure 
Sub Title (in English)  
Keyword(1) Super junction  
Keyword(2) Power MOSFET  
Keyword(3) Deep trench  
Keyword(4) On-resistance  
Keyword(5) Optimization  
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1st Author's Name Yong Tae Kim  
1st Author's Affiliation Korea Institute of Science and Technology (KIST)
2nd Author's Name Eun Sik Jung  
2nd Author's Affiliation Maplesemiconductor Incorporated (Maplesemiconductor Inc.)
3rd Author's Name Ey Goo Kang  
3rd Author's Affiliation Far East University (Far East Univ.)
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Speaker Author-1 
Date Time 2012-06-27 11:15:00 
Presentation Time 15 minutes 
Registration for SDM 
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