| Paper Abstract and Keywords |
| Presentation |
2012-08-02 13:00
[Invited Lecture]
Silicon on Thin Buried Oxide (SOTB) Technology for Ultralow-Power (ULP) Applications Nobuyuki Sugii, Toshiaki Iwamatsu, Yoshiki Yamamoto, Hideki Makiyama, Takaaki Tsunomura, Hirofumi Shinohara, Hideki Aono, Hidekazu Oda, Shiro Kamohara, Yasuo Yamaguchi (LEAP/Renesas), Tomoko Mizutani, Toshiro Hiramoto (IIS, The University of Tokyo) SDM2012-68 ICD2012-36 |
| Abstract |
(in Japanese) |
(See Japanese page) |
| (in English) |
Needs for low-power CMOS devices are still increasing. Ultralow-voltage-operation (ULV) CMOS with maximum power efficiency can extend the application field of electron devices: ubiquitous sensor network, etc. The main issues for ULV operation for the modern scaled CMOS are reducing variability and adaptive control of circuit performances enabling the operation at voltages as low as possible. In order to solve these issues, we are developing the silicon-on-thin-buried-oxide (SOTB) transistors. Features of the SOTB, transistor technology dedicated for ULV operation are presented and importance of device-circuit interaction to extend the application field is discussed. |
| Keyword |
(in Japanese) |
(See Japanese page) |
| (in English) |
CMOS / FDSOI / low power / variability / back-bias control / / / |
| Reference Info. |
IEICE Tech. Rep., vol. 112, no. 169, SDM2012-68, pp. 29-32, Aug. 2012. |
| Paper # |
SDM2012-68 |
| Date of Issue |
2012-07-26 (SDM, ICD) |
| ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
| Download PDF |
SDM2012-68 ICD2012-36 |
| Conference Information |
| Committee |
ICD SDM |
| Conference Date |
2012-08-02 - 2012-08-03 |
| Place (in Japanese) |
(See Japanese page) |
| Place (in English) |
Sapporo Center for Gender Equality, Sapporo, Hokkaido |
| Topics (in Japanese) |
(See Japanese page) |
| Topics (in English) |
Low-power, low-voltage device and circuit technology |
| Paper Information |
| Registration To |
SDM |
| Conference Code |
2012-08-ICD-SDM |
| Language |
Japanese |
| Title (in Japanese) |
(See Japanese page) |
| Sub Title (in Japanese) |
(See Japanese page) |
| Title (in English) |
Silicon on Thin Buried Oxide (SOTB) Technology for Ultralow-Power (ULP) Applications |
| Sub Title (in English) |
|
| Keyword(1) |
CMOS |
| Keyword(2) |
FDSOI |
| Keyword(3) |
low power |
| Keyword(4) |
variability |
| Keyword(5) |
back-bias control |
| Keyword(6) |
|
| Keyword(7) |
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| Keyword(8) |
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| 1st Author's Name |
Nobuyuki Sugii |
| 1st Author's Affiliation |
Low-power Electronics Association & Project/Renesas Electronics Corporation (LEAP/Renesas) |
| 2nd Author's Name |
Toshiaki Iwamatsu |
| 2nd Author's Affiliation |
Low-power Electronics Association & Project/Renesas Electronics Corporation (LEAP/Renesas) |
| 3rd Author's Name |
Yoshiki Yamamoto |
| 3rd Author's Affiliation |
Low-power Electronics Association & Project/Renesas Electronics Corporation (LEAP/Renesas) |
| 4th Author's Name |
Hideki Makiyama |
| 4th Author's Affiliation |
Low-power Electronics Association & Project/Renesas Electronics Corporation (LEAP/Renesas) |
| 5th Author's Name |
Takaaki Tsunomura |
| 5th Author's Affiliation |
Low-power Electronics Association & Project/Renesas Electronics Corporation (LEAP/Renesas) |
| 6th Author's Name |
Hirofumi Shinohara |
| 6th Author's Affiliation |
Low-power Electronics Association & Project/Renesas Electronics Corporation (LEAP/Renesas) |
| 7th Author's Name |
Hideki Aono |
| 7th Author's Affiliation |
Low-power Electronics Association & Project/Renesas Electronics Corporation (LEAP/Renesas) |
| 8th Author's Name |
Hidekazu Oda |
| 8th Author's Affiliation |
Low-power Electronics Association & Project/Renesas Electronics Corporation (LEAP/Renesas) |
| 9th Author's Name |
Shiro Kamohara |
| 9th Author's Affiliation |
Low-power Electronics Association & Project/Renesas Electronics Corporation (LEAP/Renesas) |
| 10th Author's Name |
Yasuo Yamaguchi |
| 10th Author's Affiliation |
Low-power Electronics Association & Project/Renesas Electronics Corporation (LEAP/Renesas) |
| 11th Author's Name |
Tomoko Mizutani |
| 11th Author's Affiliation |
Institute of Industrial Science, The University of Tokyo (IIS, The University of Tokyo) |
| 12th Author's Name |
Toshiro Hiramoto |
| 12th Author's Affiliation |
Institute of Industrial Science, The University of Tokyo (IIS, The University of Tokyo) |
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| Speaker |
Author-1 |
| Date Time |
2012-08-02 13:00:00 |
| Presentation Time |
25 minutes |
| Registration for |
SDM |
| Paper # |
SDM2012-68, ICD2012-36 |
| Volume (vol) |
vol.112 |
| Number (no) |
no.169(SDM), no.170(ICD) |
| Page |
pp.29-32 |
| #Pages |
4 |
| Date of Issue |
2012-07-26 (SDM, ICD) |