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Paper Abstract and Keywords
Presentation 2012-08-02 13:00
[Invited Lecture] Silicon on Thin Buried Oxide (SOTB) Technology for Ultralow-Power (ULP) Applications
Nobuyuki Sugii, Toshiaki Iwamatsu, Yoshiki Yamamoto, Hideki Makiyama, Takaaki Tsunomura, Hirofumi Shinohara, Hideki Aono, Hidekazu Oda, Shiro Kamohara, Yasuo Yamaguchi (LEAP/Renesas), Tomoko Mizutani, Toshiro Hiramoto (IIS, The University of Tokyo) SDM2012-68 ICD2012-36
Abstract (in Japanese) (See Japanese page) 
(in English) Needs for low-power CMOS devices are still increasing. Ultralow-voltage-operation (ULV) CMOS with maximum power efficiency can extend the application field of electron devices: ubiquitous sensor network, etc. The main issues for ULV operation for the modern scaled CMOS are reducing variability and adaptive control of circuit performances enabling the operation at voltages as low as possible. In order to solve these issues, we are developing the silicon-on-thin-buried-oxide (SOTB) transistors. Features of the SOTB, transistor technology dedicated for ULV operation are presented and importance of device-circuit interaction to extend the application field is discussed.
Keyword (in Japanese) (See Japanese page) 
(in English) CMOS / FDSOI / low power / variability / back-bias control / / /  
Reference Info. IEICE Tech. Rep., vol. 112, no. 169, SDM2012-68, pp. 29-32, Aug. 2012.
Paper # SDM2012-68 
Date of Issue 2012-07-26 (SDM, ICD) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2012-68 ICD2012-36

Conference Information
Committee ICD SDM  
Conference Date 2012-08-02 - 2012-08-03 
Place (in Japanese) (See Japanese page) 
Place (in English) Sapporo Center for Gender Equality, Sapporo, Hokkaido 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Low-power, low-voltage device and circuit technology 
Paper Information
Registration To SDM 
Conference Code 2012-08-ICD-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Silicon on Thin Buried Oxide (SOTB) Technology for Ultralow-Power (ULP) Applications 
Sub Title (in English)  
Keyword(1) CMOS  
Keyword(2) FDSOI  
Keyword(3) low power  
Keyword(4) variability  
Keyword(5) back-bias control  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Nobuyuki Sugii  
1st Author's Affiliation Low-power Electronics Association & Project/Renesas Electronics Corporation (LEAP/Renesas)
2nd Author's Name Toshiaki Iwamatsu  
2nd Author's Affiliation Low-power Electronics Association & Project/Renesas Electronics Corporation (LEAP/Renesas)
3rd Author's Name Yoshiki Yamamoto  
3rd Author's Affiliation Low-power Electronics Association & Project/Renesas Electronics Corporation (LEAP/Renesas)
4th Author's Name Hideki Makiyama  
4th Author's Affiliation Low-power Electronics Association & Project/Renesas Electronics Corporation (LEAP/Renesas)
5th Author's Name Takaaki Tsunomura  
5th Author's Affiliation Low-power Electronics Association & Project/Renesas Electronics Corporation (LEAP/Renesas)
6th Author's Name Hirofumi Shinohara  
6th Author's Affiliation Low-power Electronics Association & Project/Renesas Electronics Corporation (LEAP/Renesas)
7th Author's Name Hideki Aono  
7th Author's Affiliation Low-power Electronics Association & Project/Renesas Electronics Corporation (LEAP/Renesas)
8th Author's Name Hidekazu Oda  
8th Author's Affiliation Low-power Electronics Association & Project/Renesas Electronics Corporation (LEAP/Renesas)
9th Author's Name Shiro Kamohara  
9th Author's Affiliation Low-power Electronics Association & Project/Renesas Electronics Corporation (LEAP/Renesas)
10th Author's Name Yasuo Yamaguchi  
10th Author's Affiliation Low-power Electronics Association & Project/Renesas Electronics Corporation (LEAP/Renesas)
11th Author's Name Tomoko Mizutani  
11th Author's Affiliation Institute of Industrial Science, The University of Tokyo (IIS, The University of Tokyo)
12th Author's Name Toshiro Hiramoto  
12th Author's Affiliation Institute of Industrial Science, The University of Tokyo (IIS, The University of Tokyo)
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Speaker Author-1 
Date Time 2012-08-02 13:00:00 
Presentation Time 25 minutes 
Registration for SDM 
Paper # SDM2012-68, ICD2012-36 
Volume (vol) vol.112 
Number (no) no.169(SDM), no.170(ICD) 
Page pp.29-32 
#Pages
Date of Issue 2012-07-26 (SDM, ICD) 


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