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Paper Abstract and Keywords
Presentation 2012-08-02 13:25
Reduced Drain Current Variability in Fully Depleted Silicon-on-Thin-BOX (SOTB) MOSFETs
Tomoko Mizutani (Univ. of Tokyo), Yoshiki Yamamoto, Hideki Makiyama, Takaaki Tsunomura, Toshiaki Iwamatsu, Hidekazu Oda, Nobuyuki Sugii (LEAP), Toshiro Hiramoto (Univ. of Tokyo) SDM2012-69 ICD2012-37
Abstract (in Japanese) (See Japanese page) 
(in English) Drain current variability in silicon-on-thin-BOX (SOTB) MOSFETs by 65nm technology is analyzed and compared with conventional bulk MOSFETs. It is found that drain current variability in SOTB MOSFETs is largely suppressed thanks to not only reduced VTH variability but also reduced current-onset voltage (COV) variability due to intrinsic channel.
Keyword (in Japanese) (See Japanese page) 
(in English) Variability / Drain Current / FD SOI / / / / /  
Reference Info. IEICE Tech. Rep., vol. 112, no. 169, SDM2012-69, pp. 33-36, Aug. 2012.
Paper # SDM2012-69 
Date of Issue 2012-07-26 (SDM, ICD) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2012-69 ICD2012-37

Conference Information
Committee ICD SDM  
Conference Date 2012-08-02 - 2012-08-03 
Place (in Japanese) (See Japanese page) 
Place (in English) Sapporo Center for Gender Equality, Sapporo, Hokkaido 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Low-power, low-voltage device and circuit technology 
Paper Information
Registration To SDM 
Conference Code 2012-08-ICD-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Reduced Drain Current Variability in Fully Depleted Silicon-on-Thin-BOX (SOTB) MOSFETs 
Sub Title (in English)  
Keyword(1) Variability  
Keyword(2) Drain Current  
Keyword(3) FD SOI  
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1st Author's Name Tomoko Mizutani  
1st Author's Affiliation University of Tokyo (Univ. of Tokyo)
2nd Author's Name Yoshiki Yamamoto  
2nd Author's Affiliation Low-power Electronics Association & Project (LEAP)
3rd Author's Name Hideki Makiyama  
3rd Author's Affiliation Low-power Electronics Association & Project (LEAP)
4th Author's Name Takaaki Tsunomura  
4th Author's Affiliation Low-power Electronics Association & Project (LEAP)
5th Author's Name Toshiaki Iwamatsu  
5th Author's Affiliation Low-power Electronics Association & Project (LEAP)
6th Author's Name Hidekazu Oda  
6th Author's Affiliation Low-power Electronics Association & Project (LEAP)
7th Author's Name Nobuyuki Sugii  
7th Author's Affiliation Low-power Electronics Association & Project (LEAP)
8th Author's Name Toshiro Hiramoto  
8th Author's Affiliation University of Tokyo (Univ. of Tokyo)
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Speaker Author-1 
Date Time 2012-08-02 13:25:00 
Presentation Time 25 minutes 
Registration for SDM 
Paper # SDM2012-69, ICD2012-37 
Volume (vol) vol.112 
Number (no) no.169(SDM), no.170(ICD) 
Page pp.33-36 
#Pages 4 
Date of Issue 2012-07-26 (SDM, ICD) 

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