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Paper Abstract and Keywords
Presentation 2012-08-09 09:25
Formation process of reactively-sputtered nano-crystalline ZrNx barrier films
Masaru Sato, Mayumi B. Takeyama (Kitami Inst. of Tech.), Eiji Aoyagi (Tohoku Univ.), Atsushi Noya (Kitami Inst. of Tech.) CPM2012-44
Abstract (in Japanese) (See Japanese page) 
(in English) Thin diffusion barriers of high performance in several nm thicknesses are required as the size of Cu multilevel interconnects is scaled down. We have demonstrated that a reactively sputtered ZrNx thin barrier in nanocrystalline texture meets this requirement. In this study, we investigate the process and conditions to form nanocrystalline textured ZrNx thin films by reactive sputtering consulting the structure zone model by Thornton. Considering the surface mobility of incoming ad-molecules and growth process, we find two solutions to form nanocrystalline phase by choosing sputtering conditions of proper nitrogen composition in the sputtering gas, substrate temperature and target voltage. The stability of ZrNx phase as a non-stoichiometry compound also contributes the wide variation of sputtering conditions examined.
Keyword (in Japanese) (See Japanese page) 
(in English) Cu interconnects / Extremely thin barrier / ZrN / Nano-crystalline / Reactive sputtering / / /  
Reference Info. IEICE Tech. Rep., vol. 112, no. 175, CPM2012-44, pp. 45-49, Aug. 2012.
Paper # CPM2012-44 
Date of Issue 2012-08-01 (CPM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee CPM  
Conference Date 2012-08-08 - 2012-08-09 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To CPM 
Conference Code 2012-08-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Formation process of reactively-sputtered nano-crystalline ZrNx barrier films 
Sub Title (in English)  
Keyword(1) Cu interconnects  
Keyword(2) Extremely thin barrier  
Keyword(3) ZrN  
Keyword(4) Nano-crystalline  
Keyword(5) Reactive sputtering  
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Keyword(7)  
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1st Author's Name Masaru Sato  
1st Author's Affiliation Kitami Institute of Technology (Kitami Inst. of Tech.)
2nd Author's Name Mayumi B. Takeyama  
2nd Author's Affiliation Kitami Institute of Technology (Kitami Inst. of Tech.)
3rd Author's Name Eiji Aoyagi  
3rd Author's Affiliation Tohoku University (Tohoku Univ.)
4th Author's Name Atsushi Noya  
4th Author's Affiliation Kitami Institute of Technology (Kitami Inst. of Tech.)
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Speaker Author-1 
Date Time 2012-08-09 09:25:00 
Presentation Time 25 minutes 
Registration for CPM 
Paper # CPM2012-44 
Volume (vol) vol.112 
Number (no) no.175 
Page pp.45-49 
#Pages 5 
Date of Issue 2012-08-01 (CPM) 

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