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Paper Abstract and Keywords
Presentation 2012-10-26 13:25
Electronic properties of ZnO thin films grown on a-plane sapphire substrates using high-energy H2O generated by a catalytic reaction -- Analysis using a two layer model --
Eichi Nagatomi, Naoya Yamaguchi, Tomohiko Takeuchi, Souichi Satomoto, Takahiro Kato, Kanji Yasui (Nagaoka Univ. Technol.) CPM2012-93
Abstract (in Japanese) (See Japanese page) 
(in English) Electrical properties of ZnO thin films, which were grown through a reaction between dimethylzinc and high-energy H_2O produced by a Pt-catalyzed H_2 - O_2 reaction, were measured. From the thickness dependence of the electrical properties, electron mobility increased with film thickness until approximately 2800 nm. The electron mobility at room temperature increased from 54 to 189 cm^{2}V^{-1}s^{-1} with increasing film thickness from 200 nm to 2800 nm. From the temperature dependence of the electron mobility, the electron mobility increased significantly with decreasing temperature to approximately 100-150 K, but decreased at temperatures less than 100 K for films greater than 500 nm in thickness. In contrast, the electron mobility hardly changed with temperature for films lesser than 500 nm in thickness. The electron mobility and electron concentration of the upper layer were corrected based on the above results, assuming that the degenerate layer was 100 nm in thickness. Hydrogen and boron atoms were detected on the order of 10^{18} cm^{-3} and 10^{17} cm^{-3}, respectively, by secondary ion mass spectroscopy. These atoms are considered to be donor impurities in ZnO. Therefore, temperature dependence of the electron concentrations of the ZnO films was analyzed using a two-donor model.
Keyword (in Japanese) (See Japanese page) 
(in English) ZnO / catalytic reaction / high-energy H2O / electrical properties / carrier concentration / two-layer model / two donor model /  
Reference Info. IEICE Tech. Rep., vol. 112, no. 265, CPM2012-93, pp. 1-5, Oct. 2012.
Paper # CPM2012-93 
Date of Issue 2012-10-19 (CPM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee CPM  
Conference Date 2012-10-26 - 2012-10-27 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To CPM 
Conference Code 2012-10-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Electronic properties of ZnO thin films grown on a-plane sapphire substrates using high-energy H2O generated by a catalytic reaction 
Sub Title (in English) Analysis using a two layer model 
Keyword(1) ZnO  
Keyword(2) catalytic reaction  
Keyword(3) high-energy H2O  
Keyword(4) electrical properties  
Keyword(5) carrier concentration  
Keyword(6) two-layer model  
Keyword(7) two donor model  
Keyword(8)  
1st Author's Name Eichi Nagatomi  
1st Author's Affiliation Nagaoka University of Tecnology (Nagaoka Univ. Technol.)
2nd Author's Name Naoya Yamaguchi  
2nd Author's Affiliation Nagaoka University of Tecnology (Nagaoka Univ. Technol.)
3rd Author's Name Tomohiko Takeuchi  
3rd Author's Affiliation Nagaoka University of Tecnology (Nagaoka Univ. Technol.)
4th Author's Name Souichi Satomoto  
4th Author's Affiliation Nagaoka University of Tecnology (Nagaoka Univ. Technol.)
5th Author's Name Takahiro Kato  
5th Author's Affiliation Nagaoka University of Tecnology (Nagaoka Univ. Technol.)
6th Author's Name Kanji Yasui  
6th Author's Affiliation Nagaoka University of Tecnology (Nagaoka Univ. Technol.)
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Speaker Author-1 
Date Time 2012-10-26 13:25:00 
Presentation Time 25 minutes 
Registration for CPM 
Paper # CPM2012-93 
Volume (vol) vol.112 
Number (no) no.265 
Page pp.1-5 
#Pages 5 
Date of Issue 2012-10-19 (CPM) 

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