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Paper Abstract and Keywords
Presentation 2012-10-26 09:30
Noise Performance of Accumulation MOSFETs
Philippe Gaubert, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) SDM2012-92
Abstract (in Japanese) (See Japanese page) 
(in English) Whether the use of a different material such as the germanium or the use of a new structure such as multigate device for the replacement of the actual CMOS technology, the general performances of these potential solutions are enhanced. Unfortunately, these changes are going along with a significant increase of the noise level. Among the possible replacement for the future CMOS technology, a newly developed device working in accumulation rather than in inversion seems very promising. The assessment of its low frequency noise performance has been investigated. The study revealed that, contrary to the other potential solutions, not only their drivability and other features are enhanced but their low frequency noise level is reduced when compared to the conventional inversion mode MOSFET.
Keyword (in Japanese) (See Japanese page) 
(in English) 1/f noise / accumulation mode / inversion mode / MOSFET / hooge / interface trap density / mobility / Si(100)  
Reference Info. IEICE Tech. Rep., vol. 112, no. 263, SDM2012-92, pp. 15-20, Oct. 2012.
Paper # SDM2012-92 
Date of Issue 2012-10-18 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2012-92

Conference Information
Committee SDM  
Conference Date 2012-10-25 - 2012-10-26 
Place (in Japanese) (See Japanese page) 
Place (in English) Tohoku Univ. (Niche) 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Process science and new process technologies 
Paper Information
Registration To SDM 
Conference Code 2012-10-SDM 
Language English (Japanese title is available) 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Noise Performance of Accumulation MOSFETs 
Sub Title (in English)  
Keyword(1) 1/f noise  
Keyword(2) accumulation mode  
Keyword(3) inversion mode  
Keyword(4) MOSFET  
Keyword(5) hooge  
Keyword(6) interface trap density  
Keyword(7) mobility  
Keyword(8) Si(100)  
1st Author's Name Philippe Gaubert  
1st Author's Affiliation Tohoku University (Tohoku Univ.)
2nd Author's Name Akinobu Teramoto  
2nd Author's Affiliation Tohoku University (Tohoku Univ.)
3rd Author's Name Shigetoshi Sugawa  
3rd Author's Affiliation Tohoku University (Tohoku Univ.)
4th Author's Name Tadahiro Ohmi  
4th Author's Affiliation Tohoku University (Tohoku Univ.)
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Speaker Author-1 
Date Time 2012-10-26 09:30:00 
Presentation Time 25 minutes 
Registration for SDM 
Paper # SDM2012-92 
Volume (vol) vol.112 
Number (no) no.263 
Page pp.15-20 
#Pages 6 
Date of Issue 2012-10-18 (SDM) 

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