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Paper Abstract and Keywords
Presentation 2012-11-16 10:25
Prospect of Low-Energy Operation of Scaled Cross-Current Tetrode (XCT) SOI CMOS
Daiki Sato, Yasuhisa Omura (Kansai Univ.) SDM2012-105
Abstract (in Japanese) (See Japanese page) 
(in English) This paper introduces an advanced performance of cross-current tetrode (XCT) SOI CMOS devices and demonstrates their outstanding low-energy characteristics. A simple analysis suggests that the low-energy operation of XCT-SOI-CMOS devices stems from the dynamic potential floating effect yielded by the source diffusion of the original SOI MOSFET. In addition, the performance of XCT-SOI MOSFET is improved by change of source and drain doping profile (donors) for short channel length devices.
Keyword (in Japanese) (See Japanese page) 
(in English) SOI MOSFET / parasitic JFET / negative differential conductance / short-channel effects / low energy / / /  
Reference Info. IEICE Tech. Rep., vol. 112, no. 290, SDM2012-105, pp. 31-36, Nov. 2012.
Paper # SDM2012-105 
Date of Issue 2012-11-08 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee SDM  
Conference Date 2012-11-15 - 2012-11-16 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To SDM 
Conference Code 2012-11-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Prospect of Low-Energy Operation of Scaled Cross-Current Tetrode (XCT) SOI CMOS 
Sub Title (in English)  
Keyword(1) SOI MOSFET  
Keyword(2) parasitic JFET  
Keyword(3) negative differential conductance  
Keyword(4) short-channel effects  
Keyword(5) low energy  
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Keyword(8)  
1st Author's Name Daiki Sato  
1st Author's Affiliation Kansai University (Kansai Univ.)
2nd Author's Name Yasuhisa Omura  
2nd Author's Affiliation Kansai University (Kansai Univ.)
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Speaker Author-1 
Date Time 2012-11-16 10:25:00 
Presentation Time 25 minutes 
Registration for SDM 
Paper # SDM2012-105 
Volume (vol) vol.112 
Number (no) no.290 
Page pp.31-36 
#Pages 6 
Date of Issue 2012-11-08 (SDM) 

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