IEICE Technical Committee Submission System
Conference Paper's Information
Online Proceedings
[Sign in]
Tech. Rep. Archives
 Go Top Page Go Previous   [Japanese] / [English] 

Paper Abstract and Keywords
Presentation 2012-11-16 14:15
Nonlocal band to band tunneling model for tunnel-FETs -- Device and circuit models --
Koichi Fukuda, Takahiro Mori, Wataru Mizubayashi, Yukinori Morita, Akihito Tanabe, Meishoku Masahara, Tetsuji Yasuda, Shinji Migita, Hiroyuki Ota (AIST) SDM2012-111 Link to ES Tech. Rep. Archives: SDM2012-111
Abstract (in Japanese) (See Japanese page) 
(in English) Device and compact models for tunnel-FETs are developed based on nonlocal band to band tunneling model. For device modeling, some implementation variations are discussed. For compact modeling, nonlocal effects are considered by introducing simple assumptions. Both models are consistent with experimental results, and provide basics of physics-based device and compact design tools for tunnel-FETs.
Keyword (in Japanese) (See Japanese page) 
(in English) tunnel-FET / band to band tunneling / device simulation / compact model / / / /  
Reference Info. IEICE Tech. Rep., vol. 112, no. 290, SDM2012-111, pp. 63-68, Nov. 2012.
Paper # SDM2012-111 
Date of Issue 2012-11-08 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2012-111 Link to ES Tech. Rep. Archives: SDM2012-111

Conference Information
Committee SDM  
Conference Date 2012-11-15 - 2012-11-16 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To SDM 
Conference Code 2012-11-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Nonlocal band to band tunneling model for tunnel-FETs 
Sub Title (in English) Device and circuit models 
Keyword(1) tunnel-FET  
Keyword(2) band to band tunneling  
Keyword(3) device simulation  
Keyword(4) compact model  
Keyword(5)  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Koichi Fukuda  
1st Author's Affiliation National Institute of Advance Industrian Science and Technology (AIST)
2nd Author's Name Takahiro Mori  
2nd Author's Affiliation National Institute of Advance Industrian Science and Technology (AIST)
3rd Author's Name Wataru Mizubayashi  
3rd Author's Affiliation National Institute of Advance Industrian Science and Technology (AIST)
4th Author's Name Yukinori Morita  
4th Author's Affiliation National Institute of Advance Industrian Science and Technology (AIST)
5th Author's Name Akihito Tanabe  
5th Author's Affiliation National Institute of Advance Industrian Science and Technology (AIST)
6th Author's Name Meishoku Masahara  
6th Author's Affiliation National Institute of Advance Industrian Science and Technology (AIST)
7th Author's Name Tetsuji Yasuda  
7th Author's Affiliation National Institute of Advance Industrian Science and Technology (AIST)
8th Author's Name Shinji Migita  
8th Author's Affiliation National Institute of Advance Industrian Science and Technology (AIST)
9th Author's Name Hiroyuki Ota  
9th Author's Affiliation National Institute of Advance Industrian Science and Technology (AIST)
10th Author's Name  
10th Author's Affiliation ()
11th Author's Name  
11th Author's Affiliation ()
12th Author's Name  
12th Author's Affiliation ()
13th Author's Name  
13th Author's Affiliation ()
14th Author's Name  
14th Author's Affiliation ()
15th Author's Name  
15th Author's Affiliation ()
16th Author's Name  
16th Author's Affiliation ()
17th Author's Name  
17th Author's Affiliation ()
18th Author's Name  
18th Author's Affiliation ()
19th Author's Name  
19th Author's Affiliation ()
20th Author's Name  
20th Author's Affiliation ()
Speaker Author-1 
Date Time 2012-11-16 14:15:00 
Presentation Time 25 minutes 
Registration for SDM 
Paper # SDM2012-111 
Volume (vol) vol.112 
Number (no) no.290 
Page pp.63-68 
#Pages
Date of Issue 2012-11-08 (SDM) 


[Return to Top Page]

[Return to IEICE Web Page]


The Institute of Electronics, Information and Communication Engineers (IEICE), Japan