Paper Abstract and Keywords |
Presentation |
2012-11-16 14:15
Nonlocal band to band tunneling model for tunnel-FETs
-- Device and circuit models -- Koichi Fukuda, Takahiro Mori, Wataru Mizubayashi, Yukinori Morita, Akihito Tanabe, Meishoku Masahara, Tetsuji Yasuda, Shinji Migita, Hiroyuki Ota (AIST) SDM2012-111 Link to ES Tech. Rep. Archives: SDM2012-111 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Device and compact models for tunnel-FETs are developed based on nonlocal band to band tunneling model. For device modeling, some implementation variations are discussed. For compact modeling, nonlocal effects are considered by introducing simple assumptions. Both models are consistent with experimental results, and provide basics of physics-based device and compact design tools for tunnel-FETs. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
tunnel-FET / band to band tunneling / device simulation / compact model / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 112, no. 290, SDM2012-111, pp. 63-68, Nov. 2012. |
Paper # |
SDM2012-111 |
Date of Issue |
2012-11-08 (SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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Download PDF |
SDM2012-111 Link to ES Tech. Rep. Archives: SDM2012-111 |