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Paper Abstract and Keywords
Presentation 2012-11-19 15:00
Study on the THz-wave Sensors Using In-plane-orientation-controlled Pentacene OFET by Graphoepitaxy
Yuta Yoshioka (NAIST), Shi-Guang Li (NAIST/Chiba Univ.), Tomoya Ueda, Ryosuke Matsubara, Masakazu Nakamura (NAIST) OME2012-70
Abstract (in Japanese) (See Japanese page) 
(in English) We found, in our previous work, that the HOMO-band edge of a pentacene thin film is randomly fluctuated due to the existence of crystallite boundaries. The local barrier height against carrier transportation is within the range 0.5–10 meV, which corresponds well with the photon energy of THz wave. It is therefore highly probable that the irradiation of THz wave enhances the carrier transport in OFETs with pentacene thin film. In this work, we fabricated in- plane-orientation-controlled pentacene OFETs by graphoepitaxy and confirmed the reduction of average barrier height at grain boundaries. THz time-domain-spectroscopy revealed that the shape of THz absorption spectrum by accumulated careers in the orientation-controlled OFET differed from that of conventional one.
Keyword (in Japanese) (See Japanese page) 
(in English) THz-wave / Organic Thin-Film Transistor / Pentacene / Graphoepitaxy / THz Time-Domain-Spectroscopy / / /  
Reference Info. IEICE Tech. Rep., vol. 112, no. 304, OME2012-70, pp. 43-47, Nov. 2012.
Paper # OME2012-70 
Date of Issue 2012-11-12 (OME) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee OME  
Conference Date 2012-11-19 - 2012-11-19 
Place (in Japanese) (See Japanese page) 
Place (in English) Room 302, Nakanoshima Ctr., Osaka Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Organic Materials, etc. 
Paper Information
Registration To OME 
Conference Code 2012-11-OME 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Study on the THz-wave Sensors Using In-plane-orientation-controlled Pentacene OFET by Graphoepitaxy 
Sub Title (in English)  
Keyword(1) THz-wave  
Keyword(2) Organic Thin-Film Transistor  
Keyword(3) Pentacene  
Keyword(4) Graphoepitaxy  
Keyword(5) THz Time-Domain-Spectroscopy  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Yuta Yoshioka  
1st Author's Affiliation Nara Institute of Science and Technology (NAIST)
2nd Author's Name Shi-Guang Li  
2nd Author's Affiliation Nara Institute of Science and Technology/Chiba University (NAIST/Chiba Univ.)
3rd Author's Name Tomoya Ueda  
3rd Author's Affiliation Nara Institute of Science and Technology (NAIST)
4th Author's Name Ryosuke Matsubara  
4th Author's Affiliation Nara Institute of Science and Technology (NAIST)
5th Author's Name Masakazu Nakamura  
5th Author's Affiliation Nara Institute of Science and Technology (NAIST)
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Speaker Author-1 
Date Time 2012-11-19 15:00:00 
Presentation Time 25 minutes 
Registration for OME 
Paper # OME2012-70 
Volume (vol) vol.112 
Number (no) no.304 
Page pp.43-47 
#Pages 5 
Date of Issue 2012-11-12 (OME) 

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