Paper Abstract and Keywords |
Presentation |
2012-11-19 15:00
Study on the THz-wave Sensors Using In-plane-orientation-controlled Pentacene OFET by Graphoepitaxy Yuta Yoshioka (NAIST), Shi-Guang Li (NAIST/Chiba Univ.), Tomoya Ueda, Ryosuke Matsubara, Masakazu Nakamura (NAIST) OME2012-70 Link to ES Tech. Rep. Archives: OME2012-70 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We found, in our previous work, that the HOMO-band edge of a pentacene thin film is randomly fluctuated due to the existence of crystallite boundaries. The local barrier height against carrier transportation is within the range 0.5–10 meV, which corresponds well with the photon energy of THz wave. It is therefore highly probable that the irradiation of THz wave enhances the carrier transport in OFETs with pentacene thin film. In this work, we fabricated in- plane-orientation-controlled pentacene OFETs by graphoepitaxy and confirmed the reduction of average barrier height at grain boundaries. THz time-domain-spectroscopy revealed that the shape of THz absorption spectrum by accumulated careers in the orientation-controlled OFET differed from that of conventional one. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
THz-wave / Organic Thin-Film Transistor / Pentacene / Graphoepitaxy / THz Time-Domain-Spectroscopy / / / |
Reference Info. |
IEICE Tech. Rep., vol. 112, no. 304, OME2012-70, pp. 43-47, Nov. 2012. |
Paper # |
OME2012-70 |
Date of Issue |
2012-11-12 (OME) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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OME2012-70 Link to ES Tech. Rep. Archives: OME2012-70 |
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