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Paper Abstract and Keywords
Presentation 2012-11-30 16:00
Growth of InAs-QDs emitting at 1um with a broadband spectrum via In-flush method for biomedical imaging
Yuji Hino, Nobuhiko Ozaki (Wakayama Univ.), Shunsuke Ohkouchi (NEC Corp.), Naoki Ikeda, Yoshimasa Sugimoto (NIMS) ED2012-89 CPM2012-146 LQE2012-117
Abstract (in Japanese) (See Japanese page) 
(in English) We have grown self-assembled InAs quantum dots (QDs) on a GaAs substrate emitting at around 1.05um in wavelength using the In-flush technique. This technique enables the realization of a broadband 1.05-um light source with a bandwidth of beyond 200 nm via a combination of fabricated In-flushed QDs. Such a broadband light source is applicable to optical coherence tomography (OCT), thereby enabling high-resolution and large penetration depth in the OCT images. In addition, we found that a higher emission intensity of the In-flushed QDs can be obtained by reducing the annealing temperature of the In-flush process.
Keyword (in Japanese) (See Japanese page) 
(in English) InAs quantum dot / In-flush / OCT / / / / /  
Reference Info. IEICE Tech. Rep., vol. 112, no. 329, LQE2012-117, pp. 113-116, Nov. 2012.
Paper # LQE2012-117 
Date of Issue 2012-11-22 (ED, CPM, LQE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2012-89 CPM2012-146 LQE2012-117

Conference Information
Committee ED LQE CPM  
Conference Date 2012-11-29 - 2012-11-30 
Place (in Japanese) (See Japanese page) 
Place (in English) Osaka City University 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Ｎｉｔｒide and Compound Semiconductor Devices 
Paper Information
Registration To LQE 
Conference Code 2012-11-ED-LQE-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Growth of InAs-QDs emitting at 1um with a broadband spectrum via In-flush method for biomedical imaging 
Sub Title (in English)  
Keyword(1) InAs quantum dot  
Keyword(2) In-flush  
Keyword(3) OCT  
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1st Author's Name Yuji Hino  
1st Author's Affiliation Wakayama University (Wakayama Univ.)
2nd Author's Name Nobuhiko Ozaki  
2nd Author's Affiliation Wakayama University (Wakayama Univ.)
3rd Author's Name Shunsuke Ohkouchi  
3rd Author's Affiliation NEC Corporation (NEC Corp.)
4th Author's Name Naoki Ikeda  
4th Author's Affiliation National Institute for Materials Science (NIMS)
5th Author's Name Yoshimasa Sugimoto  
5th Author's Affiliation National Institute for Materials Science (NIMS)
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Speaker Author-1 
Date Time 2012-11-30 16:00:00 
Presentation Time 25 minutes 
Registration for LQE 
Paper # ED2012-89, CPM2012-146, LQE2012-117 
Volume (vol) vol.112 
Number (no) no.327(ED), no.328(CPM), no.329(LQE) 
Page pp.113-116 
#Pages 4 
Date of Issue 2012-11-22 (ED, CPM, LQE) 

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