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Paper Abstract and Keywords
Presentation 2012-11-30 10:20
Nitride semiconductor np-LEDs for improvement of efficiency droop
Takatoshi Morita, Mitsuru Kaga, Yuka Kuwano, Kenjo Matsui, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya (Meijo Univ.), Isamu Akasaki (Meijo Univ. Nagoya Univ.) ED2012-79 CPM2012-136 LQE2012-107
Abstract (in Japanese) (See Japanese page) 
(in English) A decrease of external quantum efficiency with an increase of injection current in nitride semiconductor LEDs, a so-called efficiency droop, has been an issue. We have been developing an np-junction LED consisting of a reversed layer structure of a conventional pn-junction LED in order to reduce the droop. In this report, our theoretical calculation indicated that carrier overflow was suppressed in the np-junction LEDs. In addition, the np-junction LED was designed and fabricated with a tunnel junction. We then achieved uniform emission from the np-junction LED. At the same time, an increase of driving voltage and a decrease of light output power were observed compared to those of the conventional pn-junction LED. An insufficient Mg concentration at the tunnel junction and an unintentional Mg incorporation at the active region are the reasons for poor device performances. A suppression of the droop will be expected by further improvement of the np-junction LEDs.
Keyword (in Japanese) (See Japanese page) 
(in English) np-junction LED / efficiency droop / tunnel junction / built-in electric field / Mg concentration / GaN / /  
Reference Info. IEICE Tech. Rep., vol. 112, no. 329, LQE2012-107, pp. 59-64, Nov. 2012.
Paper # LQE2012-107 
Date of Issue 2012-11-22 (ED, CPM, LQE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2012-79 CPM2012-136 LQE2012-107

Conference Information
Committee ED LQE CPM  
Conference Date 2012-11-29 - 2012-11-30 
Place (in Japanese) (See Japanese page) 
Place (in English) Osaka City University 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Ｎｉｔｒide and Compound Semiconductor Devices 
Paper Information
Registration To LQE 
Conference Code 2012-11-ED-LQE-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Nitride semiconductor np-LEDs for improvement of efficiency droop 
Sub Title (in English)  
Keyword(1) np-junction LED  
Keyword(2) efficiency droop  
Keyword(3) tunnel junction  
Keyword(4) built-in electric field  
Keyword(5) Mg concentration  
Keyword(6) GaN  
Keyword(7)  
Keyword(8)  
1st Author's Name Takatoshi Morita  
1st Author's Affiliation Meijo University (Meijo Univ.)
2nd Author's Name Mitsuru Kaga  
2nd Author's Affiliation Meijo University (Meijo Univ.)
3rd Author's Name Yuka Kuwano  
3rd Author's Affiliation Meijo University (Meijo Univ.)
4th Author's Name Kenjo Matsui  
4th Author's Affiliation Meijo University (Meijo Univ.)
5th Author's Name Tetsuya Takeuchi  
5th Author's Affiliation Meijo University (Meijo Univ.)
6th Author's Name Satoshi Kamiyama  
6th Author's Affiliation Meijo University (Meijo Univ.)
7th Author's Name Motoaki Iwaya  
7th Author's Affiliation Meijo University (Meijo Univ.)
8th Author's Name Isamu Akasaki  
8th Author's Affiliation Meijo University (Meijo Univ. Nagoya Univ.)
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Speaker Author-1 
Date Time 2012-11-30 10:20:00 
Presentation Time 25 minutes 
Registration for LQE 
Paper # ED2012-79, CPM2012-136, LQE2012-107 
Volume (vol) vol.112 
Number (no) no.327(ED), no.328(CPM), no.329(LQE) 
Page pp.59-64 
#Pages 6 
Date of Issue 2012-11-22 (ED, CPM, LQE) 

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