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Paper Abstract and Keywords
Presentation 2012-11-30 14:30
Analysis of band structure and Auger recombination process in wurtzite InGaN
Gen-ichi Hatakoshi, Shinya Nunoue (Toshiba) ED2012-86 CPM2012-143 LQE2012-114
Abstract (in Japanese) (See Japanese page) 
(in English) A characteristic feature of the wurtzite semiconductor is the existence of a higher conduction band having the energy difference comparable to the bandgap energy. In such band structure, the Auger coefficient can be significantly large and affect the efficiency droop of the LED. Based on the analysis of band structure, the Auger coefficients in wurtzite InGaN have been calculated. The results indicate that the Auger coefficient for the wurtzite InGaN near the 450 nm wavelength region is sufficiently large to cause the efficiency droop.
Keyword (in Japanese) (See Japanese page) 
(in English) Wurtzite / ，Band structure / Auger recombination / InGaN / LED / Efficiency droop / /  
Reference Info. IEICE Tech. Rep., vol. 112, no. 329, LQE2012-114, pp. 97-101, Nov. 2012.
Paper # LQE2012-114 
Date of Issue 2012-11-22 (ED, CPM, LQE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2012-86 CPM2012-143 LQE2012-114

Conference Information
Committee ED LQE CPM  
Conference Date 2012-11-29 - 2012-11-30 
Place (in Japanese) (See Japanese page) 
Place (in English) Osaka City University 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Ｎｉｔｒide and Compound Semiconductor Devices 
Paper Information
Registration To LQE 
Conference Code 2012-11-ED-LQE-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Analysis of band structure and Auger recombination process in wurtzite InGaN 
Sub Title (in English)  
Keyword(1) Wurtzite  
Keyword(2) ，Band structure  
Keyword(3) Auger recombination  
Keyword(4) InGaN  
Keyword(5) LED  
Keyword(6) Efficiency droop  
Keyword(7)  
Keyword(8)  
1st Author's Name Gen-ichi Hatakoshi  
1st Author's Affiliation Toshiba Corporation (Toshiba)
2nd Author's Name Shinya Nunoue  
2nd Author's Affiliation Toshiba Corporation (Toshiba)
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Speaker Author-1 
Date Time 2012-11-30 14:30:00 
Presentation Time 25 minutes 
Registration for LQE 
Paper # ED2012-86, CPM2012-143, LQE2012-114 
Volume (vol) vol.112 
Number (no) no.327(ED), no.328(CPM), no.329(LQE) 
Page pp.97-101 
#Pages 5 
Date of Issue 2012-11-22 (ED, CPM, LQE) 

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