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Paper Abstract and Keywords
Presentation 2012-11-30 13:15
Mg acceptor activation inp-GaN of the structure with n-GaN surface
Yuka Kuwano, Mitsuru Kaga, Takatoshi Morita, Kouji Yamashita, , Tetsuya Takeuchi, Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki (Meijo Univ.) ED2012-83 CPM2012-140 LQE2012-111
Abstract (in Japanese) (See Japanese page) 
(in English) Thermal annealing step is required to dissociate acceptor-hydrogen complexes and electrically activate the acceptor dopants in Mg-doped GaN. Meanwhile several groups have reported that hydrogen atoms did not exist in n-GaN. Therefore, it is suggested that desorption of hydrogen atoms from p-GaN entirely covered with n-GaN surfaces should be suppressed, resulting in insufficient Mg activation. In this paper, we investigated Mg activation in p-GaN and tunnel junction p-GaInN covered with n-GaN surfaces. We optimized device fabrication process including the thermal annealing step and evaluated current-voltage characteristics. As a result, we found that Mg activation from the surfaces was inhibited due to the n-GaN surfaces and laterally extend from etched sidewalls in the LED structure.
Keyword (in Japanese) (See Japanese page) 
(in English) Tunnel Junction / nitride semiconductors / GaN / Mg / activation annealing / hydrogen / /  
Reference Info. IEICE Tech. Rep., vol. 112, no. 329, LQE2012-111, pp. 81-85, Nov. 2012.
Paper # LQE2012-111 
Date of Issue 2012-11-22 (ED, CPM, LQE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2012-83 CPM2012-140 LQE2012-111

Conference Information
Committee ED LQE CPM  
Conference Date 2012-11-29 - 2012-11-30 
Place (in Japanese) (See Japanese page) 
Place (in English) Osaka City University 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Ｎｉｔｒide and Compound Semiconductor Devices 
Paper Information
Registration To LQE 
Conference Code 2012-11-ED-LQE-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Mg acceptor activation inp-GaN of the structure with n-GaN surface 
Sub Title (in English)  
Keyword(1) Tunnel Junction  
Keyword(2) nitride semiconductors  
Keyword(3) GaN  
Keyword(4) Mg  
Keyword(5) activation annealing  
Keyword(6) hydrogen  
Keyword(7)  
Keyword(8)  
1st Author's Name Yuka Kuwano  
1st Author's Affiliation Meijo University (Meijo Univ.)
2nd Author's Name Mitsuru Kaga  
2nd Author's Affiliation Meijo University (Meijo Univ.)
3rd Author's Name Takatoshi Morita  
3rd Author's Affiliation Meijo University (Meijo Univ.)
4th Author's Name Kouji Yamashita  
4th Author's Affiliation Meijo University (Meijo Univ.)
5th Author's Name * *  
5th Author's Affiliation Meijo University (Meijo Univ.)
6th Author's Name Tetsuya Takeuchi  
6th Author's Affiliation Meijo University (Meijo Univ.)
7th Author's Name Motoaki Iwaya  
7th Author's Affiliation Meijo University (Meijo Univ.)
8th Author's Name Satoshi Kamiyama  
8th Author's Affiliation Meijo University (Meijo Univ.)
9th Author's Name Isamu Akasaki  
9th Author's Affiliation Meijo University (Meijo Univ.)
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Speaker Author-1 
Date Time 2012-11-30 13:15:00 
Presentation Time 25 minutes 
Registration for LQE 
Paper # ED2012-83, CPM2012-140, LQE2012-111 
Volume (vol) vol.112 
Number (no) no.327(ED), no.328(CPM), no.329(LQE) 
Page pp.81-85 
#Pages 5 
Date of Issue 2012-11-22 (ED, CPM, LQE) 

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