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Paper Abstract and Keywords
Presentation 2012-11-30 11:25
Effects of internal fields and potential inhomogeneity on the lasing properties of InGaN-based green laser diodes fabricated on (0001) polar substrates
Yoon Seok Kim (Kyout Univ.), Akio Kaneta, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.), Takashi Miyoshi, Shin-ichi Nagahama (Nichia) ED2012-81 CPM2012-138 LQE2012-109 Link to ES Tech. Rep. Archives: ED2012-81 CPM2012-138 LQE2012-109
Abstract (in Japanese) (See Japanese page) 
(in English) The optical properties of InGaN-based green (512 nm) laser structures fabricated on (0001) GaN substrates are investigated by means of photoluminescence and gain spectroscopies. It is demonstrated that in the state-of-the-art (0001) green InGaN quantum wells, potential fluctuations are drastically suppressed, and the internal loss is as low as ~10 /cm, both of which lead to a low threshold current density of 2.75 kA/cm2.The suppressed inhomogeneity also contributes to high linearity of gain increase with the injection current. The differential gain is relatively low, and is attributed to a low confinement factor in the longer wavelength spectral range.
Keyword (in Japanese) (See Japanese page) 
(in English) Green laser diodes / (0001) planes / Optical properties / Gain / Potential fluctuations / Piezoelectric polarization / /  
Reference Info. IEICE Tech. Rep., vol. 112, no. 329, LQE2012-109, pp. 71-74, Nov. 2012.
Paper # LQE2012-109 
Date of Issue 2012-11-22 (ED, CPM, LQE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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Download PDF ED2012-81 CPM2012-138 LQE2012-109 Link to ES Tech. Rep. Archives: ED2012-81 CPM2012-138 LQE2012-109

Conference Information
Committee ED LQE CPM  
Conference Date 2012-11-29 - 2012-11-30 
Place (in Japanese) (See Japanese page) 
Place (in English) Osaka City University 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Nitride and Compound Semiconductor Devices 
Paper Information
Registration To LQE 
Conference Code 2012-11-ED-LQE-CPM 
Language English 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Effects of internal fields and potential inhomogeneity on the lasing properties of InGaN-based green laser diodes fabricated on (0001) polar substrates 
Sub Title (in English)  
Keyword(1) Green laser diodes  
Keyword(2) (0001) planes  
Keyword(3) Optical properties  
Keyword(4) Gain  
Keyword(5) Potential fluctuations  
Keyword(6) Piezoelectric polarization  
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Keyword(8)  
1st Author's Name Yoon Seok Kim  
1st Author's Affiliation Kyoto University (Kyout Univ.)
2nd Author's Name Akio Kaneta  
2nd Author's Affiliation Kyoto University (Kyoto Univ.)
3rd Author's Name Mitsuru Funato  
3rd Author's Affiliation Kyoto University (Kyoto Univ.)
4th Author's Name Yoichi Kawakami  
4th Author's Affiliation Kyoto University (Kyoto Univ.)
5th Author's Name Takashi Miyoshi  
5th Author's Affiliation Nichia corporation (Nichia)
6th Author's Name Shin-ichi Nagahama  
6th Author's Affiliation Nichia corporation (Nichia)
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Speaker Author-1 
Date Time 2012-11-30 11:25:00 
Presentation Time 25 minutes 
Registration for LQE 
Paper # ED2012-81, CPM2012-138, LQE2012-109 
Volume (vol) vol.112 
Number (no) no.327(ED), no.328(CPM), no.329(LQE) 
Page pp.71-74 
#Pages
Date of Issue 2012-11-22 (ED, CPM, LQE) 


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