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Paper Abstract and Keywords
Presentation 2012-11-30 16:50
Development of Ge Light Emitter for Monolithic Light Source
Kazuki Tani, Shin-ichi Saito, Katsuya Oda (PETRA), Tadashi Okumura, Toshiyuki Mine (Hitachi), Tatemi Ido (PETRA) ED2012-91 CPM2012-148 LQE2012-119
Abstract (in Japanese) (See Japanese page) 
(in English) For the purpose of realization of monolithic light sources on a silicon chip, Ge epitaxial growth technique was investigated, and a Ge light emitting diode, which consists of a Ge waveguide grown on a pn diode fabricated on SOI (silicon-on-insulator) layer, was fabricated. A post annealing after low temperature epitaxial growth of Ge layer effectively improved the crystallinity and light emitting properties of Ge, and fabricated devices showed good electrical and luminous properties.
Keyword (in Japanese) (See Japanese page) 
(in English) Silicon photonics / Ge / Light emitting diode / / / / /  
Reference Info. IEICE Tech. Rep., vol. 112, no. 329, LQE2012-119, pp. 121-124, Nov. 2012.
Paper # LQE2012-119 
Date of Issue 2012-11-22 (ED, CPM, LQE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2012-91 CPM2012-148 LQE2012-119

Conference Information
Committee ED LQE CPM  
Conference Date 2012-11-29 - 2012-11-30 
Place (in Japanese) (See Japanese page) 
Place (in English) Osaka City University 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Ｎｉｔｒide and Compound Semiconductor Devices 
Paper Information
Registration To LQE 
Conference Code 2012-11-ED-LQE-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Development of Ge Light Emitter for Monolithic Light Source 
Sub Title (in English)  
Keyword(1) Silicon photonics  
Keyword(2) Ge  
Keyword(3) Light emitting diode  
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1st Author's Name Kazuki Tani  
1st Author's Affiliation Photoniks Electronics Technology Research Association (PETRA)
2nd Author's Name Shin-ichi Saito  
2nd Author's Affiliation Photoniks Electronics Technology Research Association (PETRA)
3rd Author's Name Katsuya Oda  
3rd Author's Affiliation Photoniks Electronics Technology Research Association (PETRA)
4th Author's Name Tadashi Okumura  
4th Author's Affiliation Hitachi, Ltd. (Hitachi)
5th Author's Name Toshiyuki Mine  
5th Author's Affiliation Hitachi, Ltd. (Hitachi)
6th Author's Name Tatemi Ido  
6th Author's Affiliation Photoniks Electronics Technology Research Association (PETRA)
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Speaker Author-1 
Date Time 2012-11-30 16:50:00 
Presentation Time 25 minutes 
Registration for LQE 
Paper # ED2012-91, CPM2012-148, LQE2012-119 
Volume (vol) vol.112 
Number (no) no.327(ED), no.328(CPM), no.329(LQE) 
Page pp.121-124 
#Pages 4 
Date of Issue 2012-11-22 (ED, CPM, LQE) 

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