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Paper Abstract and Keywords
Presentation 2012-11-30 09:30
Selective MOVPE growth on nonpolar GaN substrates
Daiki Jinno, Shunsuke Okada, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Yuuki Enatsu, Satoru Nagao (Mitsubishi Chemical Corp.) ED2012-77 CPM2012-134 LQE2012-105
Abstract (in Japanese) (See Japanese page) 
(in English) The selective-area growth (SAG) on nonpolar (10-10) (20-21) (20-2-1) GaN substrates by MOVPE was demonstrated, and the facet structures were investigated. The different structures depending on the SiO2-mask stripe directions were observed. Anisotropic structures with (000-1) and (10-11) facets were obtained for all of the nonpolar GaN substrates along the [-12-10] direction. On the other hand, {11-20} and (20-2-1) facets appeared for SAG on the (20-21) GaN and (20-2-1) GaN substrates with SiO2 mask along the [-1014] and [10-14] directions, respectively.
Keyword (in Japanese) (See Japanese page) 
(in English) nonpolar / GaN / MOVPE / selective area growth / facets / / /  
Reference Info. IEICE Tech. Rep., vol. 112, no. 329, LQE2012-105, pp. 51-54, Nov. 2012.
Paper # LQE2012-105 
Date of Issue 2012-11-22 (ED, CPM, LQE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2012-77 CPM2012-134 LQE2012-105

Conference Information
Committee ED LQE CPM  
Conference Date 2012-11-29 - 2012-11-30 
Place (in Japanese) (See Japanese page) 
Place (in English) Osaka City University 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Ｎｉｔｒide and Compound Semiconductor Devices 
Paper Information
Registration To LQE 
Conference Code 2012-11-ED-LQE-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Selective MOVPE growth on nonpolar GaN substrates 
Sub Title (in English)  
Keyword(1) nonpolar  
Keyword(2) GaN  
Keyword(3) MOVPE  
Keyword(4) selective area growth  
Keyword(5) facets  
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Keyword(8)  
1st Author's Name Daiki Jinno  
1st Author's Affiliation Mie University (Mie Univ.)
2nd Author's Name Shunsuke Okada  
2nd Author's Affiliation Mie University (Mie Univ.)
3rd Author's Name Hideto Miyake  
3rd Author's Affiliation Mie University (Mie Univ.)
4th Author's Name Kazumasa Hiramatsu  
4th Author's Affiliation Mie University (Mie Univ.)
5th Author's Name Yuuki Enatsu  
5th Author's Affiliation Mitsubishi Chemical Corporation (Mitsubishi Chemical Corp.)
6th Author's Name Satoru Nagao  
6th Author's Affiliation Mitsubishi Chemical Corporation (Mitsubishi Chemical Corp.)
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Speaker Author-1 
Date Time 2012-11-30 09:30:00 
Presentation Time 25 minutes 
Registration for LQE 
Paper # ED2012-77, CPM2012-134, LQE2012-105 
Volume (vol) vol.112 
Number (no) no.327(ED), no.328(CPM), no.329(LQE) 
Page pp.51-54 
#Pages 4 
Date of Issue 2012-11-22 (ED, CPM, LQE) 

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