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Paper Abstract and Keywords
Presentation 2012-12-13 09:35
Gain characterization of 19-stacked InGaAs/GaAs quantum dot laser diode fabricated by ultrahigh rate MBE growth technique
Fumihiko Tanoue, Hiroharu Sugawara (Tokyo Metropolitan Univ.), Kouichi Akahane, Naokatsu Yamamoto (NICT) LQE2012-121
Abstract (in Japanese) (See Japanese page) 
(in English) 19-stacked InGaAs quantum dot (QD) laser diode was fabricated by using ultrahigh-rate molecular beam epitaxial (MBE) growth technique, and gain characteristics was investigated at room temperature. Net modal gain obtained from the ground state was 103 c$m^{-1}$ at 2.25 kA/c$m^{2}$, and modal gain was evaluated as high as 117c$m^{-1}$ calculated by addition of net modal gain to optical internal loss of 14.4c$m^{-1}$. A saturation gain was higher than that of 12-stacked QD laser fabricated by using this technique, and this result indicate that highly stacking of QDs using this technique is effective to improve net modal gain of QD lasers.
Keyword (in Japanese) (See Japanese page) 
(in English) InGaAs Quantum Dot / Quantum Dot Laser / High Modal Gain / Molecular Beam Epitaxy / / / /  
Reference Info. IEICE Tech. Rep., vol. 112, no. 356, LQE2012-121, pp. 1-4, Dec. 2012.
Paper # LQE2012-121 
Date of Issue 2012-12-06 (LQE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF LQE2012-121

Conference Information
Committee LQE  
Conference Date 2012-12-13 - 2012-12-13 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To LQE 
Conference Code 2012-12-LQE 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Gain characterization of 19-stacked InGaAs/GaAs quantum dot laser diode fabricated by ultrahigh rate MBE growth technique 
Sub Title (in English)  
Keyword(1) InGaAs Quantum Dot  
Keyword(2) Quantum Dot Laser  
Keyword(3) High Modal Gain  
Keyword(4) Molecular Beam Epitaxy  
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1st Author's Name Fumihiko Tanoue  
1st Author's Affiliation Tokyo Metropolitan University (Tokyo Metropolitan Univ.)
2nd Author's Name Hiroharu Sugawara  
2nd Author's Affiliation Tokyo Metropolitan University (Tokyo Metropolitan Univ.)
3rd Author's Name Kouichi Akahane  
3rd Author's Affiliation National Institute of Information and Communications (NICT)
4th Author's Name Naokatsu Yamamoto  
4th Author's Affiliation National Institute of Information and Communications (NICT)
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Speaker Author-1 
Date Time 2012-12-13 09:35:00 
Presentation Time 25 minutes 
Registration for LQE 
Paper # LQE2012-121 
Volume (vol) vol.112 
Number (no) no.356 
Page pp.1-4 
#Pages 4 
Date of Issue 2012-12-06 (LQE) 

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