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Paper Abstract and Keywords
Presentation 2012-12-13 13:50
[Encouragement Talk] Advances in Quantum Dot Lasers on Silicon Substrates by Wafer Bonding
Katsuaki Tanabe, Yasuhiko Arakawa (Univ. Tokyo) LQE2012-128
Abstract (in Japanese) (See Japanese page) 
(in English) III-V semiconductor compound light sources monolithically integrated on Si substrates or waveguides would be promising for the realization of photonic integrated circuits. Specifically quantum dot lasers yield low lasing threshold current and high temperature stability and therefore are suitable for high-density integration. We have developed low-resistivity GaAs/Si direct wafer bonding technique and successfully fabricated 1.3 um InAs/GaAs quantum dot lasers on Si substrates. Our conductive direct-bonded heterostructures enables both electrical injection and optical coupling, and therefore gives more flexibility in design and operation of photonic integrated circuits in contrast to conventional SiO2- and metal-mediated bonding. Our fabricated laser device has achieved a lasing threshold current density of 205 A/cm2 at room temperature.
Keyword (in Japanese) (See Japanese page) 
(in English) Quantum Dots / Semiconductor Lasers / Silicon Photonics / Wafer Bonding / / / /  
Reference Info. IEICE Tech. Rep., vol. 112, no. 356, LQE2012-128, pp. 31-33, Dec. 2012.
Paper # LQE2012-128 
Date of Issue 2012-12-06 (LQE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF LQE2012-128

Conference Information
Committee LQE  
Conference Date 2012-12-13 - 2012-12-13 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To LQE 
Conference Code 2012-12-LQE 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Advances in Quantum Dot Lasers on Silicon Substrates by Wafer Bonding 
Sub Title (in English)  
Keyword(1) Quantum Dots  
Keyword(2) Semiconductor Lasers  
Keyword(3) Silicon Photonics  
Keyword(4) Wafer Bonding  
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1st Author's Name Katsuaki Tanabe  
1st Author's Affiliation University of Tokyo (Univ. Tokyo)
2nd Author's Name Yasuhiko Arakawa  
2nd Author's Affiliation University of Tokyo (Univ. Tokyo)
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Speaker Author-1 
Date Time 2012-12-13 13:50:00 
Presentation Time 25 minutes 
Registration for LQE 
Paper # LQE2012-128 
Volume (vol) vol.112 
Number (no) no.356 
Page pp.31-33 
#Pages 3 
Date of Issue 2012-12-06 (LQE) 

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