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Paper Abstract and Keywords
Presentation 2012-12-13 11:25
1550nm/1310nm dual wavelength high power LD
Shintaro Morimoto, Hiroshi Mori, Atsushi Yamada, Yasuaki Nagashima, Motoaki Fujita, Shinichi Onuki, Hiroaki Yoshidaya, Kazuaki Mise (Anritsu Devices) LQE2012-125
Abstract (in Japanese) (See Japanese page) 
(in English) We have developed a high power 1550nm/1310nm dual wavelength laser diode, which is suitable for Optical Time Domain Reflectometer. It has 1550nm and 1310nm active layers aligned in tandem. The cavity for 1550nm
light consists of front facet and rear facet, and that for 1310nm light consists of front facet and a grating located in center of the chip. Over 150mW output power was obtained for both of 1310nm and 1550nm light, by adjusting the grating length and cavity lengths. The fiber coupling efficiency of 80% was achieved by introducing partially tapered waveguide structure.
Keyword (in Japanese) (See Japanese page) 
(in English) semiconductor laser / integration / fiber coupling efficiency / OTDR / dual wavelength / / /  
Reference Info. IEICE Tech. Rep., vol. 112, no. 356, LQE2012-125, pp. 19-22, Dec. 2012.
Paper # LQE2012-125 
Date of Issue 2012-12-06 (LQE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF LQE2012-125

Conference Information
Committee LQE  
Conference Date 2012-12-13 - 2012-12-13 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To LQE 
Conference Code 2012-12-LQE 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) 1550nm/1310nm dual wavelength high power LD 
Sub Title (in English)  
Keyword(1) semiconductor laser  
Keyword(2) integration  
Keyword(3) fiber coupling efficiency  
Keyword(4) OTDR  
Keyword(5) dual wavelength  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Shintaro Morimoto  
1st Author's Affiliation Anritsu Devices Co.,Ltd (Anritsu Devices)
2nd Author's Name Hiroshi Mori  
2nd Author's Affiliation Anritsu Devices Co.,Ltd (Anritsu Devices)
3rd Author's Name Atsushi Yamada  
3rd Author's Affiliation Anritsu Devices Co.,Ltd (Anritsu Devices)
4th Author's Name Yasuaki Nagashima  
4th Author's Affiliation Anritsu Devices Co.,Ltd (Anritsu Devices)
5th Author's Name Motoaki Fujita  
5th Author's Affiliation Anritsu Devices Co.,Ltd (Anritsu Devices)
6th Author's Name Shinichi Onuki  
6th Author's Affiliation Anritsu Devices Co.,Ltd (Anritsu Devices)
7th Author's Name Hiroaki Yoshidaya  
7th Author's Affiliation Anritsu Devices Co.,Ltd (Anritsu Devices)
8th Author's Name Kazuaki Mise  
8th Author's Affiliation Anritsu Devices Co.,Ltd (Anritsu Devices)
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Speaker Author-1 
Date Time 2012-12-13 11:25:00 
Presentation Time 25 minutes 
Registration for LQE 
Paper # LQE2012-125 
Volume (vol) vol.112 
Number (no) no.356 
Page pp.19-22 
#Pages 4 
Date of Issue 2012-12-06 (LQE) 

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