Paper Abstract and Keywords |
Presentation |
2012-12-13 14:15
III-V/Si Direct Bonding by N2 Plasma Surface Activation and Its Application to Hybrid Laser Yusuke Hayashi, Ryo Osabe, Keita Fukuda, JoonHyun Kang, Yuki Atsumi, Nobuhiko Nishiyama, Shigehisa Arai (Tokyo Inst. Tech.) LQE2012-129 Link to ES Tech. Rep. Archives: LQE2012-129 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
III-V/Si hybrid integration with direct bonding is an attractive way to realize large scale photonic integrated circuits. Since plasma activated bonding is expected to have a higher bonding strength at a lower heating temperature, in comparison with conventional bonding methods, realization of highly efficient hybrid laser is expected. In this paper, by utilizing N2 plasma activated bonding, InP/Si bonding strength and PL intensity after the bonding was investigated, and even at bonding temperature of 150°C, bonding strength of 0.7 MPa enough for fabricating lasers was obtained, while over 70% PL intensity was sustained after the bonding. Moreover, GaInAsP/Si hybrid laser was fabricated with low bonding temperature of 150°C compared with conventional reports, and threshold current density of 850 A/cm2 was achieved. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Plasma activated bonding / Hybrid laser / Silicon photonics / / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 112, no. 356, LQE2012-129, pp. 35-40, Dec. 2012. |
Paper # |
LQE2012-129 |
Date of Issue |
2012-12-06 (LQE) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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LQE2012-129 Link to ES Tech. Rep. Archives: LQE2012-129 |
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