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Paper Abstract and Keywords
Presentation 2012-12-13 14:15
III-V/Si Direct Bonding by N2 Plasma Surface Activation and Its Application to Hybrid Laser
Yusuke Hayashi, Ryo Osabe, Keita Fukuda, JoonHyun Kang, Yuki Atsumi, Nobuhiko Nishiyama, Shigehisa Arai (Tokyo Inst. Tech.) LQE2012-129
Abstract (in Japanese) (See Japanese page) 
(in English) III-V/Si hybrid integration with direct bonding is an attractive way to realize large scale photonic integrated circuits. Since plasma activated bonding is expected to have a higher bonding strength at a lower heating temperature, in comparison with conventional bonding methods, realization of highly efficient hybrid laser is expected. In this paper, by utilizing N2 plasma activated bonding, InP/Si bonding strength and PL intensity after the bonding was investigated, and even at bonding temperature of 150°C, bonding strength of 0.7 MPa enough for fabricating lasers was obtained, while over 70% PL intensity was sustained after the bonding. Moreover, GaInAsP/Si hybrid laser was fabricated with low bonding temperature of 150°C compared with conventional reports, and threshold current density of 850 A/cm2 was achieved.
Keyword (in Japanese) (See Japanese page) 
(in English) Plasma activated bonding / Hybrid laser / Silicon photonics / / / / /  
Reference Info. IEICE Tech. Rep., vol. 112, no. 356, LQE2012-129, pp. 35-40, Dec. 2012.
Paper # LQE2012-129 
Date of Issue 2012-12-06 (LQE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee LQE  
Conference Date 2012-12-13 - 2012-12-13 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To LQE 
Conference Code 2012-12-LQE 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) III-V/Si Direct Bonding by N2 Plasma Surface Activation and Its Application to Hybrid Laser 
Sub Title (in English)  
Keyword(1) Plasma activated bonding  
Keyword(2) Hybrid laser  
Keyword(3) Silicon photonics  
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1st Author's Name Yusuke Hayashi  
1st Author's Affiliation Tokyo Institute of Technology (Tokyo Inst. Tech.)
2nd Author's Name Ryo Osabe  
2nd Author's Affiliation Tokyo Institute of Technology (Tokyo Inst. Tech.)
3rd Author's Name Keita Fukuda  
3rd Author's Affiliation Tokyo Institute of Technology (Tokyo Inst. Tech.)
4th Author's Name JoonHyun Kang  
4th Author's Affiliation Tokyo Institute of Technology (Tokyo Inst. Tech.)
5th Author's Name Yuki Atsumi  
5th Author's Affiliation Tokyo Institute of Technology (Tokyo Inst. Tech.)
6th Author's Name Nobuhiko Nishiyama  
6th Author's Affiliation Tokyo Institute of Technology (Tokyo Inst. Tech.)
7th Author's Name Shigehisa Arai  
7th Author's Affiliation Tokyo Institute of Technology (Tokyo Inst. Tech.)
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Speaker Author-1 
Date Time 2012-12-13 14:15:00 
Presentation Time 25 minutes 
Registration for LQE 
Paper # LQE2012-129 
Volume (vol) vol.112 
Number (no) no.356 
Page pp.35-40 
#Pages 6 
Date of Issue 2012-12-06 (LQE) 

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