講演抄録/キーワード |
講演名 |
2012-12-18 11:40
High Frequency Performance of GaAsSb/InAlAs/InGaAs Tunnel Diodes ○Mikhail Patrashin・Norihiko Sekine・Akifumi Kasamatsu・Issei Watanabe・Iwao Hosako(NICT)・Tsuyoshi Takahashi・Masaru Sato・Yasuhiro Nakasha・Naoki Hara(Fujitsu Lab.) ED2012-106 エレソ技報アーカイブへのリンク:ED2012-106 |
抄録 |
(和) |
(まだ登録されていません) |
(英) |
Increasing interest to high-resolution active and passive MMW-THz imaging and high-speed wireless data communications motivates development of novel devices and systems operating beyond 100 GHz. Among various detector technologies, zero-bias heterostructure tunnel diodes based on III-V compound semiconductors have promising characteristics, such as reduced 1/f noise, higher operational frequencies due to small device capacitances, and feasibility of monolithic integration of the detectors with low noise amplifier (LNA) circuits. We evaluated performance of InP-based, zero-bias, square-law GaAsSb/InAlAs/InGaAs tunnel diodes for direct detection at frequencies up to 330 GHz. The detectors with submicron cross-sectional area demonstrated sensitivities above 500 V/W. Optimization of the device structure can improve the sensitivity and the cut-off frequency. |
キーワード |
(和) |
/ / / / / / / |
(英) |
Semiconductor heterostructures / tunnel diodes / millimeter wave detectors / millimeter wave imaging / MMICs / / / |
文献情報 |
信学技報, vol. 112, no. 364, ED2012-106, pp. 75-76, 2012年12月. |
資料番号 |
ED2012-106 |
発行日 |
2012-12-10 (ED) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
著作権に ついて |
技術研究報告に掲載された論文の著作権は電子情報通信学会に帰属します.(許諾番号:10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
PDFダウンロード |
ED2012-106 エレソ技報アーカイブへのリンク:ED2012-106 |