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Paper Abstract and Keywords
Presentation 2012-12-18 11:40
High Frequency Performance of GaAsSb/InAlAs/InGaAs Tunnel Diodes
Mikhail Patrashin, Norihiko Sekine, Akifumi Kasamatsu, Issei Watanabe, Iwao Hosako (NICT), Tsuyoshi Takahashi, Masaru Sato, Yasuhiro Nakasha, Naoki Hara (Fujitsu Lab.) ED2012-106
Abstract (in Japanese) (See Japanese page) 
(in English) Increasing interest to high-resolution active and passive MMW-THz imaging and high-speed wireless data communications motivates development of novel devices and systems operating beyond 100 GHz. Among various detector technologies, zero-bias heterostructure tunnel diodes based on III-V compound semiconductors have promising characteristics, such as reduced 1/f noise, higher operational frequencies due to small device capacitances, and feasibility of monolithic integration of the detectors with low noise amplifier (LNA) circuits. We evaluated performance of InP-based, zero-bias, square-law GaAsSb/InAlAs/InGaAs tunnel diodes for direct detection at frequencies up to 330 GHz. The detectors with submicron cross-sectional area demonstrated sensitivities above 500 V/W. Optimization of the device structure can improve the sensitivity and the cut-off frequency.
Keyword (in Japanese) (See Japanese page) 
(in English) Semiconductor heterostructures / tunnel diodes / millimeter wave detectors / millimeter wave imaging / MMICs / / /  
Reference Info. IEICE Tech. Rep., vol. 112, no. 364, ED2012-106, pp. 75-76, Dec. 2012.
Paper # ED2012-106 
Date of Issue 2012-12-10 (ED) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee ED  
Conference Date 2012-12-17 - 2012-12-18 
Place (in Japanese) (See Japanese page) 
Place (in English) Tohoku University 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Millimeter wave / Terahertz devices and systems 
Paper Information
Registration To ED 
Conference Code 2012-12-ED 
Language English 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) High Frequency Performance of GaAsSb/InAlAs/InGaAs Tunnel Diodes 
Sub Title (in English)  
Keyword(1) Semiconductor heterostructures  
Keyword(2) tunnel diodes  
Keyword(3) millimeter wave detectors  
Keyword(4) millimeter wave imaging  
Keyword(5) MMICs  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Mikhail Patrashin  
1st Author's Affiliation NICT (NICT)
2nd Author's Name Norihiko Sekine  
2nd Author's Affiliation NICT (NICT)
3rd Author's Name Akifumi Kasamatsu  
3rd Author's Affiliation NICT (NICT)
4th Author's Name Issei Watanabe  
4th Author's Affiliation NICT (NICT)
5th Author's Name Iwao Hosako  
5th Author's Affiliation NICT (NICT)
6th Author's Name Tsuyoshi Takahashi  
6th Author's Affiliation Fujitsu Laboratories Ltd. (Fujitsu Lab.)
7th Author's Name Masaru Sato  
7th Author's Affiliation Fujitsu Laboratories Ltd. (Fujitsu Lab.)
8th Author's Name Yasuhiro Nakasha  
8th Author's Affiliation Fujitsu Laboratories Ltd. (Fujitsu Lab.)
9th Author's Name Naoki Hara  
9th Author's Affiliation Fujitsu Laboratories Ltd. (Fujitsu Lab.)
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Speaker Author-1 
Date Time 2012-12-18 11:40:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2012-106 
Volume (vol) vol.112 
Number (no) no.364 
Page pp.75-76 
#Pages 2 
Date of Issue 2012-12-10 (ED) 

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