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| Presentation | 2012-12-18 11:40 High Frequency Performance of GaAsSb/InAlAs/InGaAs Tunnel Diodes Mikhail Patrashin, Norihiko Sekine, Akifumi Kasamatsu, Issei Watanabe, Iwao Hosako (NICT), Tsuyoshi Takahashi, Masaru Sato, Yasuhiro Nakasha, Naoki Hara (Fujitsu Lab.)  ED2012-106 Link to ES Tech. Rep. Archives: ED2012-106 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Increasing interest to high-resolution active and passive MMW-THz imaging and high-speed wireless data communications motivates development of novel devices and systems operating beyond 100 GHz. Among various detector technologies, zero-bias heterostructure tunnel diodes based on III-V compound semiconductors have promising characteristics, such as reduced 1/f noise, higher operational frequencies due to small device capacitances, and feasibility of monolithic integration of the detectors with low noise amplifier (LNA) circuits. We evaluated performance of InP-based, zero-bias, square-law GaAsSb/InAlAs/InGaAs tunnel diodes for direct detection at frequencies up to 330 GHz. The detectors with submicron cross-sectional area demonstrated sensitivities above 500 V/W. Optimization of the device structure can improve the sensitivity and the cut-off frequency. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Semiconductor heterostructures / tunnel diodes / millimeter wave detectors / millimeter wave imaging / MMICs / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 112, no. 364, ED2012-106, pp. 75-76, Dec. 2012. | |
| Paper # | ED2012-106 | |
| Date of Issue | 2012-12-10 (ED) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2012-106 Link to ES Tech. Rep. Archives: ED2012-106 |
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| Conference Information | |
| Committee | ED |
| Conference Date | 2012-12-17 - 2012-12-18 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Tohoku University |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Millimeter wave / Terahertz devices and systems |
| Paper Information | |
| Registration To | ED |
| Conference Code | 2012-12-ED |
| Language | English |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | High Frequency Performance of GaAsSb/InAlAs/InGaAs Tunnel Diodes |
| Sub Title (in English) | |
| Keyword(1) | Semiconductor heterostructures |
| Keyword(2) | tunnel diodes |
| Keyword(3) | millimeter wave detectors |
| Keyword(4) | millimeter wave imaging |
| Keyword(5) | MMICs |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Mikhail Patrashin |
| 1st Author's Affiliation | NICT (NICT) |
| 2nd Author's Name | Norihiko Sekine |
| 2nd Author's Affiliation | NICT (NICT) |
| 3rd Author's Name | Akifumi Kasamatsu |
| 3rd Author's Affiliation | NICT (NICT) |
| 4th Author's Name | Issei Watanabe |
| 4th Author's Affiliation | NICT (NICT) |
| 5th Author's Name | Iwao Hosako |
| 5th Author's Affiliation | NICT (NICT) |
| 6th Author's Name | Tsuyoshi Takahashi |
| 6th Author's Affiliation | Fujitsu Laboratories Ltd. (Fujitsu Lab.) |
| 7th Author's Name | Masaru Sato |
| 7th Author's Affiliation | Fujitsu Laboratories Ltd. (Fujitsu Lab.) |
| 8th Author's Name | Yasuhiro Nakasha |
| 8th Author's Affiliation | Fujitsu Laboratories Ltd. (Fujitsu Lab.) |
| 9th Author's Name | Naoki Hara |
| 9th Author's Affiliation | Fujitsu Laboratories Ltd. (Fujitsu Lab.) |
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| Speaker | Author-1 |
| Date Time | 2012-12-18 11:40:00 |
| Presentation Time | 25 minutes |
| Registration for | ED |
| Paper # | ED2012-106 |
| Volume (vol) | vol.112 |
| Number (no) | no.364 |
| Page | pp.75-76 |
| #Pages | 2 |
| Date of Issue | 2012-12-10 (ED) |
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