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Paper Abstract and Keywords
Presentation 2013-01-18 13:50
Effects of Deep Trapping States at High Temperatures on Transient Performances of AlGaN/GaN HFETs
Kenichiro Tanaka, Masahiro Ishida, Tetsuzo Ueda, Tsuyoshi Tanaka (Panasonic) ED2012-124 MW2012-154
Abstract (in Japanese) (See Japanese page) 
(in English) Kinetic studies on the current collapse of a normally-off AlGaN/GaN heterostructure field effect transistor under a high voltage have been performed above room temperature. The on-state resistance after the on switching from the off state increases at high temperatures, contrary to the expectation that the emission of electrons is enhanced at elevated temperatures. This result indicates that elevating the temperature enhances not only the emission of electrons but also their capture. We experimentally observe that the enhancement of the capture process at high temperatures originates from the energy barrier for the capture of electrons, the value of which is determined to be
0.17~eV. The origin of the energy barrier for the capture process is explained by a configuration coordinate diagram.
Keyword (in Japanese) (See Japanese page) 
(in English) current collapse / GaN / AlGaN / HFET / HEMT / configuration coordinate diagram / /  
Reference Info. IEICE Tech. Rep., vol. 112, no. 380, ED2012-124, pp. 63-68, Jan. 2013.
Paper # ED2012-124 
Date of Issue 2013-01-10 (ED, MW) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2012-124 MW2012-154

Conference Information
Committee MW ED  
Conference Date 2013-01-17 - 2013-01-18 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Compound Semiconductor IC, High-speed and high-frequency devices, Microwave Technologies, etc. 
Paper Information
Registration To ED 
Conference Code 2013-01-MW-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Effects of Deep Trapping States at High Temperatures on Transient Performances of AlGaN/GaN HFETs 
Sub Title (in English)  
Keyword(1) current collapse  
Keyword(2) GaN  
Keyword(3) AlGaN  
Keyword(4) HFET  
Keyword(5) HEMT  
Keyword(6) configuration coordinate diagram  
Keyword(7)  
Keyword(8)  
1st Author's Name Kenichiro Tanaka  
1st Author's Affiliation Panasonic Corporation (Panasonic)
2nd Author's Name Masahiro Ishida  
2nd Author's Affiliation Panasonic Corporation (Panasonic)
3rd Author's Name Tetsuzo Ueda  
3rd Author's Affiliation Panasonic Corporation (Panasonic)
4th Author's Name Tsuyoshi Tanaka  
4th Author's Affiliation Panasonic Corporation (Panasonic)
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Speaker Author-1 
Date Time 2013-01-18 13:50:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2012-124, MW2012-154 
Volume (vol) vol.112 
Number (no) no.380(ED), no.381(MW) 
Page pp.63-68 
#Pages 6 
Date of Issue 2013-01-10 (ED, MW) 

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