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| Presentation | 2013-01-24 15:16 Characterization of InGaN Quantum Wells by Two-Wavelength Excited Photoluminescence Naoki Murakoshi, A. Z. M. Touhidul Islam, Takeshi Fukuda, Norihiko Kamata (Saitama Univ.), Yasuhiko Arakawa (Univ. Tokyo)  EID2012-21 Link to ES Tech. Rep. Archives: EID2012-21 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | We investigated below-gap levels acting as non-radiative (NRR) centers in MOCVD-grown In0.16Ga0.84N/ In0.02Ga0.98N Quantum well (QW) structures. A method of Two-wavelength Excited Photoluminescence (PL) has been applied as a non-destructive, and a non-contacting spectroscopy without electrode, together with a time-resolved PL. With increasing the below-gap excitation intensity, the PL from the well layer increased, while that from barrier and GaN layers decreased. This implies that several NRR centers activated by the BGE energy of 1.17eV exist inside the forbidden gap of the QW, showing a possibility of analyzing carrier recombination mechanism quantitatively. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | InGaN / Quantum well structure / Non-radiative recombination center / Two-wavelength excited photoluminescence / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 112, no. 409, EID2012-21, pp. 49-52, Jan. 2013. | |
| Paper # | EID2012-21 | |
| Date of Issue | 2013-01-17 (EID) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | EID2012-21 Link to ES Tech. Rep. Archives: EID2012-21 |
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| Conference Information | |
| Committee | ITE-IDY EID IEE-EDD |
| Conference Date | 2013-01-24 - 2013-01-25 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Shizuoka Univ. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | EID |
| Conference Code | 2013-01-IDY-EID-EDD |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Characterization of InGaN Quantum Wells by Two-Wavelength Excited Photoluminescence |
| Sub Title (in English) | |
| Keyword(1) | InGaN |
| Keyword(2) | Quantum well structure |
| Keyword(3) | Non-radiative recombination center |
| Keyword(4) | Two-wavelength excited photoluminescence |
| Keyword(5) | |
| Keyword(6) | |
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| Keyword(8) | |
| 1st Author's Name | Naoki Murakoshi |
| 1st Author's Affiliation | Saitama University (Saitama Univ.) |
| 2nd Author's Name | A. Z. M. Touhidul Islam |
| 2nd Author's Affiliation | Saitama University (Saitama Univ.) |
| 3rd Author's Name | Takeshi Fukuda |
| 3rd Author's Affiliation | Saitama University (Saitama Univ.) |
| 4th Author's Name | Norihiko Kamata |
| 4th Author's Affiliation | Saitama University (Saitama Univ.) |
| 5th Author's Name | Yasuhiko Arakawa |
| 5th Author's Affiliation | University of Tokyo (Univ. Tokyo) |
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| Speaker | Author-1 |
| Date Time | 2013-01-24 15:16:00 |
| Presentation Time | 8 minutes |
| Registration for | EID |
| Paper # | EID2012-21 |
| Volume (vol) | vol.112 |
| Number (no) | no.409 |
| Page | pp.49-52 |
| #Pages | 4 |
| Date of Issue | 2013-01-17 (EID) |
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